Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Chien-teh Kao"'
Autor:
Chien‐teh Kao, Alison J Tessmer, B. A. Fox, Joseph S. Holmes, H. A. Wynands, Glenn J. Tessmer, L.S. Plano, David L. Dreifus, R.B. Henard, Michelle L. Hartsell, Dean Malta
Publikováno v:
Diamond and Related Materials. 4:622-627
Diamond offers tremendous potential for electronic applications such as field effect transistors. An investigation of the electrical properties of boron-doped homoepitaxial diamond films and the metal-oxide-diamond gate structure was performed. Addit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::060447348aa975d3ae892cebd8193d02
https://doi.org/10.1016/0925-9635(94)05245-x
https://doi.org/10.1016/0925-9635(94)05245-x
Publikováno v:
Physical Review B. 46:2809-2813
We have used electron paramagnetic resonance to study the migration of photoproduced self-trapped holes (STH's) at temperatures below 30 K, where the migration can no longer proceed by classical phonon-assisted hopping, and a tunneling mechanism domi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f24100783b223decb7685778badd8bb9
https://doi.org/10.1103/physrevb.46.2809
https://doi.org/10.1103/physrevb.46.2809
Publikováno v:
Radiation Effects and Defects in Solids. :541-546
Hole-trapping at cation vacancies and iodide impurity in silver halides was studied by means of electron paramagnetic resonance (EPR). In AgCl, the hole was found to be preferentially self-trapped on a Ag ion next to a cation vacancy, forming a pertu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47644c342ff890890c14ea1c1652614
https://doi.org/10.1080/10420159108220777
https://doi.org/10.1080/10420159108220777
Autor:
Chien-teh Kao, J. C. Austin, Eric C. Frey, Hans Hofsäss, M. L. Swanson, Wm. C. Hughes, Lawrence Slifkin
Publikováno v:
Physical Review B. 42:7699-7705
Etude de l'interaction des lacunes avec des ions 111 In trivalents dans AgCl par la methode de la correlation angulaire γγ perturbee. Les mesures a 77 K montrent que les ions 111 In apparaissent de facon predominante dans deux defauts cristallins b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72102eca013366e146943354cd30aa56
https://doi.org/10.1103/physrevb.42.7699
https://doi.org/10.1103/physrevb.42.7699
Publikováno v:
Physical Review B. 42:3142-3151
On demontre que dans AgCl, le trou positif peut etre reellement lie a une lacune cationique negatif. Les deux types de centres paramagnetiques resultant, qui survivent jusqu'a respectivement 70 et 110 K, sont identifies comme centre de trous auto-pie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23d9351ed1b8e73c5e90c7e5f598562a
https://doi.org/10.1103/physrevb.42.3142
https://doi.org/10.1103/physrevb.42.3142
Autor:
Biju Ninan, Kevin Moraes, See-Eng Phan, Tanaka Keiichi, Jianxin Lei, Chien-Teh Kao, Kishore Lavu, Srinivas Gandikota, Bingxi Wood, Xinliang Lu
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
For advanced devices at 65 nm node and beyond, nickel silicide formed by depositing Ni or its alloys with subsequent annealing has been chosen as the source/drain and gate contact materials. An in-situ dry chemical cleaning technology (Siconi ) has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0639de0cba8bf70e15e5ed5a99adf71
https://doi.org/10.1109/issm.2006.4493117
https://doi.org/10.1109/issm.2006.4493117
Publikováno v:
Applied Physics Letters. 62:2347-2349
A highly oriented, (100) textured diamond film was grown on a Si substrate, followed by the deposition of an epitaxial boron‐doped layer for electrical characterization. Temperature‐dependent Hall effect measurements were performed between 180 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032eedc0ee27b25762c67acdcfe42945
https://doi.org/10.1063/1.109414
https://doi.org/10.1063/1.109414
Autor:
Joseph S. Holmes, Alison J Tessmer, Chien‐teh Kao, David L. Dreifus, Brian R. Stoner, Dean Malta, L.S. Plano
Publikováno v:
MRS Proceedings. 339
Metal-oxide-semiconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on polycrystalline, (100) highly-oriented, and single crystal diamond insulating substrates. Diamond films were grown using a mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8055ad66f0da6dddfde7f6bc542a12f3
https://doi.org/10.1557/proc-339-109
https://doi.org/10.1557/proc-339-109
Autor:
Kishore Lavu, Michael Smayling, Jianxin Lei, Srinivas Gandikota, Bingxi Wood, Chien-Teh Kao, Biju Ninan, See-Eng Phan
Publikováno v:
ECS Meeting Abstracts. :1289-1289
Pre-Silicide clean is a critical step in NiSi integration to keep silicide/Si interface clean and defect-free for good device performance. Traditional pre-silicide clean uses HF wet clean which requires tight queue time control to prevent native oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24eb1b28e54e8e4f6fe803995fd359d2
https://doi.org/10.1149/ma2007-02/25/1289
https://doi.org/10.1149/ma2007-02/25/1289
Autor:
Jianxin Lei, See-Eng Phan, Xinliang Lu, Chien-Teh Kao, Lavu, K., Moraes, K., Tanaka, K., Wood, B., Biju Ninan, Gandikota, S.
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing; 2006, p393-396, 4p