Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Chien-Shun Liao"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 6, Pp 424-429 (2016)
An efficient way to reduce the loss of stored charge in a memory cell was proposed in this paper. Conventionally, the storage structure is stressed by applying voltages during the read operation. By structurally separating the read operation from the
Externí odkaz:
https://doaj.org/article/70ea85100703499c9cc7b73dc10aa423
Autor:
Chien-Shun Liao, 廖建舜
105
In this dissertation, the electrical properties of the laterally gated metal-insulator-semiconductor (MIS) tunnel diode with Al/SiO2/Si(p) structure had been thoroughly investigated. It was found that the electrical properties of the lateral
In this dissertation, the electrical properties of the laterally gated metal-insulator-semiconductor (MIS) tunnel diode with Al/SiO2/Si(p) structure had been thoroughly investigated. It was found that the electrical properties of the lateral
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/5vhvzz
Publikováno v:
IEEE Transactions on Nanotechnology. 16:1011-1015
In this work, the Al/SiO2/p-Si metal-insulator-semiconductor structures with various metal thicknesses were fabricated. The charging/discharging transient current behaviors during sweeping or switching the voltages have been studied. By thinning down
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::254d80c544e003f721d1bdb756779e6b
https://doi.org/10.1109/tnano.2017.2740943
https://doi.org/10.1109/tnano.2017.2740943
Publikováno v:
ECS Transactions. 80:387-392
From previous studies on MIS tunneling diode (MIS TD) with surrounding MOS capacitor devices, I-V characteristics of MIS TD changed when various gate voltages of surrounding device were applied. [1] [2] However, the C-V behavior hadn’t been discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cec1bc7457ae925aeb45ac01e6d41722
https://doi.org/10.1149/08001.0387ecst
https://doi.org/10.1149/08001.0387ecst
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 6, Pp 424-429 (2016)
An efficient way to reduce the loss of stored charge in a memory cell was proposed in this paper. Conventionally, the storage structure is stressed by applying voltages during the read operation. By structurally separating the read operation from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d049ad59297d6050b284451e407c14c
https://doi.org/10.1109/jeds.2016.2591956
https://doi.org/10.1109/jeds.2016.2591956
Autor:
Jenn-Gwo Hwu, Chien-Shun Liao
Publikováno v:
ECS Transactions. 75:77-86
It was found that the saturation current of metal-insulator-semiconductor (MIS) tunnel diode (TD) is proportional to the device perimeter due to the fringing field effect [1]. And, it was believed that the saturation current of MIS TD increases with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af974295207b0f1ebc32d905c9995cec
https://doi.org/10.1149/07505.0077ecst
https://doi.org/10.1149/07505.0077ecst
Autor:
Chien-Shun Liao, Jenn-Gwo Hwu
Publikováno v:
IEEE Transactions on Electron Devices. 63:2864-2870
The transfer characteristics of a metal-insulator-semiconductor (MIS) tunnel diode (TD) controlled by a separated MIS TD as gate were investigated. Negative transconductance (NT) exists around the flat-band region in the transfer curve even though th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c1e7383bac6a15a2e2c10ef6a0294c4
https://doi.org/10.1109/ted.2016.2565688
https://doi.org/10.1109/ted.2016.2565688
Autor:
Chien-Shun Liao, Jenn-Gwo Hwu
Publikováno v:
IEEE Transactions on Electron Devices. 62:2061-2065
The current of an MIS tunnel diode was tremendously changed (about five orders) while sweeping the gate bias of an MOS capacitor nearby. It was supposed that the effective Schottky barrier height of the MIS tunnel diode was affected by the bias of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44760890d915dea55ebffe8e1fe91248
https://doi.org/10.1109/ted.2015.2424245
https://doi.org/10.1109/ted.2015.2424245
Autor:
Chien-Shun Liao, Jenn-Gwo Hwu
Publikováno v:
ECS Meeting Abstracts. :837-837
Negative gate transconductance (NGT) has been demonstrated in various devices like gated resonant tunneling devices, modulation doped FETs, and gate/source overlapped heterojunction tunnel FETs, and has been used for ultra-high frequency filters, mul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30809a3ce4fdd081af6f03ed23dae623
https://doi.org/10.1149/ma2015-02/18/837
https://doi.org/10.1149/ma2015-02/18/837
Autor:
Chien-Shun Liao, Jenn-Gwo Hwu
Publikováno v:
ECS Meeting Abstracts. :946-946
Capacitors are commonly used in semiconductor devices like gate capacitors of transistors, memory cells of dynamic random access memory (DRAM), and so on. In this work, a capacitor with electrochemically grown thin oxide films was fabricated as shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc3bb98c9a865c5e845476a38d0f5660
https://doi.org/10.1149/ma2015-02/23/946
https://doi.org/10.1149/ma2015-02/23/946