Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Chien-Kang Kao"'
Publikováno v:
Microelectronic Engineering. 86:33-36
As the first step of DRAM manufacture, preanneal process plays an important role in determining the threshold voltage variation. It is found that the higher trans-1,2-dichloroethene flow in pad oxide growth and the higher nitrogen flow in high-temper
Publikováno v:
Semiconductor Science and Technology. 22:49-53
A new approach to monitor the quality of an ultra-thin nitride film has been proposed. The nitride quality is monitored by observing the oxide thickness for the nitride film after wet oxidation since the resistance to oxidation strongly depends on it
Autor:
Chien-Kang Kao, Niranjan Prakash Kuraganti, Chuen-Horng Tsai, I-Nan Lin, Rajendra Kumar Pandey, Kung-Jeng Ma
Publikováno v:
Integrated Ferroelectrics. 57:1257-1264
Publikováno v:
Integrated Ferroelectrics. 54:707-712
Autor:
Kung-Jeng Ma, I-Nan Lin, R. K. Pandey, Chien-Kang Kao, Niranjan Prakash Kuraganti, Chuen-Horng Tsai
Publikováno v:
Integrated Ferroelectrics. 57:1257-1264
PZT thin films are deposited on SiO2/Si substrate by metallo-organic decomposition (MOD) process, using SrTiO3 (STO) as buffer layer for textured growth. The STO layers deposited on SiO2/Si substrate by pulsed laser deposition process show (100)/(200
Publikováno v:
Integrated Ferroelectrics. 54:707-712
In this study, we report the deposition of crack-free transparent PZT films (up to ∼859 nm) by metallo-organic decomposition (MOD) process on amorphous silica substrate. Effect of SrTiO3 (STO) buffer layer on the growth behavior of PZT thin films d
Publikováno v:
Integrated Ferroelectrics. 50:241-249
We have successfully synthesized high quality silica by using plasma enhanced chemical vapor deposition (PECVD) of tetraethyl orthosilicate (TEOS) precursors. Optical transmission spectroscopy and Fourier transform infrared (FTIR) spectroscopy indica
Publikováno v:
Applied Physics Letters. 83:3915-3917
Pb(Zr0.52Ti0.48)O3 (PZT) thin films were synthesized on a sapphire substrate for application as planar optical waveguide devices using a metalorganic decomposition (MOD) process. Pyrochlore phase, which always forms preferentially when the PZT thin f
Publikováno v:
The 17th Annual SEMI/IEEE ASMC 2006 Conference.
In this paper, we discuss the cell capacitor characteristics via wafer acceptance test (WAT) and reliability test for advanced trench capacitor. Combination of N2O reoxidation and NH3 nitridation processes can improve leakage current and maintain the
Publikováno v:
CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671).
Preparation of PZT films on sapphire substrate applied to optical active devices, like switches, has been well developed over several years. Most integrated optical passive devices such as waveguide, coupler and array waveguide grating (AWG) are form