Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Chien-Hsien Tseng"'
Autor:
Seiji Takahashi, Yi-Min Huang, Jhy-Jyi Sze, Tung-Ting Wu, Fu-Sheng Guo, Wei-Cheng Hsu, Tung-Hsiung Tseng, King Liao, Chin-Chia Kuo, Tzu-Hsiang Chen, Wei-Chieh Chiang, Chun-Hao Chuang, Keng-Yu Chou, Chi-Hsien Chung, Kuo-Yu Chou, Chien-Hsien Tseng, Chuan-Joung Wang, Dun-Nien Yaung
Publikováno v:
Sensors, Vol 17, Iss 12, p 2816 (2017)
A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated
Externí odkaz:
https://doaj.org/article/e943c9552b8649ad8783b651839b2c7f
Autor:
Y.K. Fang, T.H. Hsu, C.S. Wang, Chien-Hsien Tseng, D.N. Yaung, Ho-Ching Chien, S.G. Wuu, L.L. Yao, S.F. Chen, W.D. Wang
Publikováno v:
IEEE Electron Device Letters. 26:634-636
The air gap in situ microlens (AGML) above-pixel sensor with 0.18-/spl mu/m CMOS image sensor technology has been successfully developed to dramatically improve the optical crosstalk and pixel sensitivity. We demonstrated excellent crosstalk diminuti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d70b43e392d0372ad8d2f2fb8118688
https://doi.org/10.1109/led.2005.854373
https://doi.org/10.1109/led.2005.854373
Autor:
Shou-Gwo Wuu, Dun-Nian Yaung, Tse-Heng Chou, T.H. Hsu, Jeng-Shyan Lin, Yean-Kuen Fang, S.F. Chen, Chih-Wei Lin, Ho-Ching Chien, C.S. Wang, Chien-Hsien Tseng, Cheng-I Lin
Publikováno v:
IEEE Electron Device Letters. 26:547-549
An effective method has been successfully developed to improve the sensitivity of deep sub-micrometer CMOS image sensors (CIS). In advanced CIS technology, the shallow trench isolation (STI) SiO/sub 2/ on the photodiode and the SiON film are used for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45c74ad940d82df3391576ace20e5204
https://doi.org/10.1109/led.2005.852536
https://doi.org/10.1109/led.2005.852536
Autor:
T.H. Hsu, Dun-Nian Yaung, Chien-Hsien Tseng, Jeng-Shyan Lin, C.S. Lin, S.F. Chen, Y.K. Fang, Shou-Gwo Wuu, C.Y. Lin, C.S. Wang, Ho-Ching Chien
Publikováno v:
IEEE Electron Device Letters. 26:301-303
In this letter, color mixings of a CMOS image sensor with air-gap-guard-ring (AGGR) and conventional structures were investigated in 0.18-/spl mu/m CMOS image sensor technology. As the light incident angle is increased from 0/spl deg/ to 15/spl deg/,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c312deafe9639130ac141491b8e34a9
https://doi.org/10.1109/led.2005.846574
https://doi.org/10.1109/led.2005.846574
Autor:
Shou-Gwo Wuu, S.F. Chen, T.H. Hsu, Jeng-Shyan Lin, Y.K. Fang, Dun-Nian Yaung, Chien-Hsien Tseng, Cheng-I Lin, Chih-Wei Lin, Ho-Ching Chien, C.S. Wang
Publikováno v:
IEEE Electron Device Letters. 25:427-429
An effective method to evaluate the hot-carrier-induced pixel performance degradation of 0.18-/spl mu/m CMOS active pixel sensor has been reported. The hot carriers generated at the source follower transistor and absorbed by the nearby photodiode wil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b085a07cb0636d675f5cfcadb430376
https://doi.org/10.1109/led.2004.829000
https://doi.org/10.1109/led.2004.829000
Autor:
T.H. Hsu, Y.K. Fang, Shou-Gwo Wuu, Chih-Wei Lin, Cheng-I Lin, Ho-Ching Chien, C.S. Wang, S.F. Chen, Jeng-Shyan Lin, Dun-Nian Yaung, Chien-Hsien Tseng
Publikováno v:
IEEE Electron Device Letters. 25:375-377
A dielectric structure, air gap guard ring, has been successfully developed to reduce optical crosstalk thus improving pixel sensitivity of CMOS image sensor with 0.18-/spl mu/m technology. Based on refraction index (RI) differences between dielectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::127052148fabc7e71b6d8f8e7441f56b
https://doi.org/10.1109/led.2004.828995
https://doi.org/10.1109/led.2004.828995
Autor:
T.H. Hsu, Shou-Gwo Wuu, Ho-Ching Chien, Chien-Hsien Tseng, C.S. Wang, S.F. Chen, Chih-Wei Lin, Y.K. Fang, Cheng-I Lin, Dun-Nian Yaung, Jeng-Shyan Lin
Publikováno v:
IEEE Electron Device Letters. 25:22-24
Light guide, a novel dielectric structure consisting of PE-Oxide and FSG-Oxide, has been developed to reduce crosstalk in 0.18-/spl mu/m CMOS image sensor technology. Due to the difference in refraction index (1.46 for PE-Oxide and 1.435 for FSG-Oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21193f18010e284f1dfdc31fbcd02215
https://doi.org/10.1109/led.2003.821597
https://doi.org/10.1109/led.2003.821597
Autor:
Chien-Hsien Tseng, Shou-Gwo Wuu, Ho-Ching Chien, Dun-Nian Yaung, Tze-Hsuan Hsu, Jeng-Shyan Lin, Hung-Jen Hsu, Chung-Yi Yu, Chin-Hsin Lo, Wang, C.S.
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p997-1000, 4p
Autor:
Ho-Ching Chien, Shou-Gwo Wuu, Dun-Nian Yaung, Chien-Hsien Tseng, Jeng-Shyan Lin, Wang, C.S., Chin-Kung Chang, Yu-Kung Hsiao
Publikováno v:
Digest. International Electron Devices Meeting; 2002, p813-816, 4p
Autor:
Shou-Gwo Wuu, Dun-Nian Yaung, Chien-Hsien Tseng, Ho-Ching Chien, Wang, C.S., Yean-Kuen Hsiao, Chin-Kung Chang, Chang, B.J.
Publikováno v:
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138); 2000, p705-708, 4p