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pro vyhledávání: '"Chien-Hsi Lin"'
Autor:
Chien-Hsi Lin, 林見曦
101
We link volatility and information asymmetry, and designed to fill the gap between them by empirical evidence of implied volatility and stock price jump. Many previous papers indicate that implied volatility have good predictive power to kno
We link volatility and information asymmetry, and designed to fill the gap between them by empirical evidence of implied volatility and stock price jump. Many previous papers indicate that implied volatility have good predictive power to kno
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/52444118621734601454
Autor:
Jui-Chung Shiao, Der-Chin Wu, Chien-Hsi Lin, Chern-Lin Chen, Wen-Haw Lu, Chien-Hsun Chen, Chao-Cheng Lin
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
Hetero-junction with intrinsic amorphous thin-film (HIT) solar cells has been confirmed to achieve 23% by Sanyo Electric. In literatures, many efforts have been made in the past few years to improve the interface quality with additional annealing ste
Autor:
Chien-Hsi Lin, Chien-Hsun Chen, Chao-Cheng Lin, Jui-Chung Shiao, Der-Chin Wu, Wen-Haw Lu, Chern-Lin Chen
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
How to further enhance the efficiencies of the silicon solar cells which can be applied into commercial production for the next generation is a most important issue. On the way to achieving higher efficiencies, back contact solar cells and heterojunc
Autor:
Chien-Hsi Lin, Chung-Wen Lan, Chien-Hsun Chen, Der-Chin Wu, Chih-Hung Liao, Wei-Chih Hsu, Wen-Haw Lu, Jui-Chung Shiao
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
Dark current-voltage (I–V) curves are usually used to analyze the electric characteristics of solar cell device based on one-diode and two-diode equivalent circuit models. In this study, we extracted the parameters from dark I–V with Nelder-Mead
Autor:
Der-Chin Wu, Jui-Chung Shiao, Chien-Hsi Lin, Chien-Hsun Chen, Chih-Hung Liao, Wei-Chih Hsu, Wen-Haw Lu, Chung-Wen Lan
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference (PVSC); 2010, p002751-002755, 5p