Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chien Kang Hsiung"'
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2490 (2023)
Advanced packaging technology has become more and more important in the semiconductor industry because of the benefits of higher I/O density compared to conventional soldering technology. In advanced packaging technology, copper–copper (Cu-Cu) bond
Externí odkaz:
https://doaj.org/article/f1275610d72949668a22059170c2ca79
Autor:
Po-Chi Chen, Steven Verhaverbeke, Glen T. Mori, Demin Liu, Yan-Pin Huang, Chien-Kang Hsiung, Kuan-Neng Chen, Shin-Yi Huang
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
Cu/SiO 2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120°C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and $10^{-8}\Omega-\mathrm{c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e1872c65909c326cb9407953d6d24b2
https://doi.org/10.1109/vlsitechnology18217.2020.9265008
https://doi.org/10.1109/vlsitechnology18217.2020.9265008
Publikováno v:
Solid State Phenomena. :81-84
In this study, the dependence of Pd/GaAs Schottky diode on the electroless plating (EP) variable is systematically studied. Both alkaline and acidic formulas for electroless Pd depositions are employed for investigations. The correlation between Pd g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6003f2d5a7801fd8b7bd388ae38d869d
https://doi.org/10.4028/www.scientific.net/ssp.124-126.81
https://doi.org/10.4028/www.scientific.net/ssp.124-126.81
Publikováno v:
Semiconductor Science and Technology. 18:620-626
In this work, Pd–GaAs Schottky diodes have been fabricated by a novel electroless plating technique. A scanning electron microscope (SEM) and Raman spectra are used to characterize the surface morphology of Pd film and Pd–GaAs interface, respecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::623a58ce3722c42e736e4bd3744f4fa5
https://doi.org/10.1088/0268-1242/18/7/304
https://doi.org/10.1088/0268-1242/18/7/304
Autor:
Chien-Kang Hsiung, 熊健剛
91
In this work, the Pd/GaAs (MS structured) and Pd/Oxide/GaAs (MOS structured) Schottky-barrier diode hydrogen sensors were fabricated by electroless plating technique. In the first part of the research, alkaline and acidic baths were used to d
In this work, the Pd/GaAs (MS structured) and Pd/Oxide/GaAs (MOS structured) Schottky-barrier diode hydrogen sensors were fabricated by electroless plating technique. In the first part of the research, alkaline and acidic baths were used to d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/59232211334922771066
