Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Chien Huang Tsai"'
Publikováno v:
Surface and Interface Analysis. 50:541-546
Publikováno v:
Applied Surface Science. 330:185-190
We successfully discover the trend of elastic to plastic contact phenomena of 200-nm-thick Si 0.80 Ge 0.20 and Si 0.75 Ge 0.25 films using scanning probe microscope. It is evidenced that elastic to plastic contact is dominated using thermal treatment
Publikováno v:
Applied Surface Science. 308:293-300
The electrochemistry and ion transport properties of PEDOT in different solvents have been investigated. Conductivity enhancement has been observed in dimethyl sulfoxide (DMSO) and ethylene glycol (EG). This is attributed to the transformation of pol
Publikováno v:
Polymers for Advanced Technologies. 25:989-994
In this study, an aniline (ANI) solution containing well-dispersed multiwall carbon nanotubes (CNTs) has been prepared. With an aim of improving the dispersability of CNTs in ANI monomer, we synthesize CNTs/ANI complexes using a reflux technique whic
Publikováno v:
Applied Surface Science. 258:6730-6734
In this study, ZnTiO3 films were grown by radio frequency magnetron co-sputtering using a sintered ceramic target on silicon substrates, we used nanoindenter techniques under a CSM mode to evaluate the hardness (H) and elastic modulus (E) of the film
Publikováno v:
Surface and Interface Analysis. 44:1314-1318
We present a study of the nanotribological behavior of ZnTiO3 films; the surface morphology, stoichiometry, and friction (μ) were analyzed using atomic force microscopy, X-ray photoelectron spectroscopy, and nanoscratch system. It is confirmed that
Autor:
Chien-Huang Tsai, Chang-Pin Chou, Wen-Kuang Hsu, Ming-Jhang Wu, Hua-Chiang Wen, Tun-Yuan Chiang
Publikováno v:
Applied Surface Science. 258:5001-5004
The SiGe heterostructures can play a role that drastically enhances the carrier mobility of SiGe heterodevices, such as strained Si metal oxide semiconductor field effect transistors. However, it is difficult to access the both issues, that is, the p
Publikováno v:
Surface Engineering. 28:171-175
In this study, ultrahigh vacuum chemical vapour deposition was employed to deposit multilayered silicon–germanium (SiGe) films. Subsequently, we take those samples for ex situ thermal treatments in the furnace system (400 and 500°C). The periodic
Autor:
Chien-Huang Tsai, Wei-Hung Yau
Publikováno v:
Surface and Interface Analysis. 44:535-538
We present horizontally-oriented multiwalled carbon nanotubes (CNTs) grown by means of thermal chemical vapor deposition. The CNT is across the trenches of the catalytic metals on predefined Ti electrodes. The properties of the lateral multiwalled CN
Autor:
Chien-Huang Tsai
Publikováno v:
Vacuum. 86:1328-1332
In this study, we used an RF plasma-assisted molecular beam epitaxy (RF-MBE) system to grow single-crystalline indium nitride (InN) films onto aluminum nitride (AlN) buffer layers on Si (111) substrates. We then used nanoindentation techniques and re