Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Chien Chieh Lee"'
Autor:
Kai-Hao Chang, Yen-Chun Chen, Yo-Song Huang, Wei-Lun Hsu, Guo-Hao Lu, Chao-Feng Liu, Chun-Jen Weng, Yu-Hsin Lin, Che-Chin Chen, Chien-Chieh Lee, Yu-Chi Chang, Po-Hsiang Wang, Chih-Ming Wang
Publikováno v:
Nanophotonics. 12:1309-1315
In this study, an axicon metalens comprising a large central disc surrounded by nanoposts for energy harvesting in composite metal-oxide semiconductor sensors was designed, fabricated, and experimentally characterized. The main role of the central di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47aa638187e1a0af9fca87e6a6609935
https://doi.org/10.1515/nanoph-2023-0017
https://doi.org/10.1515/nanoph-2023-0017
Autor:
Wei-Cheng Kuo, Hung-Chi Hsieh, Wu Chih-Hung, Huang Wen-Hsiang, Chien-Chieh Lee, Jenq-Yang Chang
Publikováno v:
International Journal of Photoenergy, Vol 2016 (2016)
We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical
Externí odkaz:
https://doaj.org/article/96bd5f98bffc493e9a258f54a394e2af
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 1, Pp 80-85 (2012)
In this paper, we propose a method based on Helmholtz equation to determine the coupling length of the light propagating in concentrically curved waveguides by the conformal transformation. After the transformation, the concentrically curved waveguid
Externí odkaz:
https://doaj.org/article/d531949c8ccb40d4a93ed543bf3d1ff7
Autor:
Wen-Yih Chen, Chien-Chieh Lee, Jenq-Yang Chang, Tsung-Hsun Yang, Jen-Tsai Liu, Ting-Jou Ding, Sheng-Fu Lin
Publikováno v:
Sensors, Vol 11, Iss 9, Pp 8953-8965 (2011)
Recent developments in aptamers have led to their widespread use in analytical and diagnostic applications, particularly for biosensing. Previous studies have combined aptamers as ligands with various sensors for numerous applications. However, mergi
Externí odkaz:
https://doaj.org/article/3a1c6ae38e4b480090294c156b7ba7ad
Autor:
Teng-Hsiang Chang, Chiao Chang, Yen-Ho Chu, Chien-Chieh Lee, Jenq-Yang Chang, I-Chen Chen, Tomi T. Li
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (F
Externí odkaz:
https://doaj.org/article/d27e04eac54c4fa880f45910365944a6
Autor:
Li Han Kau, Tomi T. Li, Yiin Kuen Fuh, Hung Jui Huang, Yu Lin Hsieh, Ho Song Wang, Chien Chieh Lee
Publikováno v:
The International Journal of Advanced Manufacturing Technology. 101:329-337
In this study, the process of hydrogenated amorphous silicon (a-Si:H) thin films is prepared by plasma enhanced chemical vapor deposition (PECVD) in conjunction with the in situ plasma diagnostic tool of optical emission spectrometer (OES). The passi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1668c2f82590fcd8b34687f44b99d5
https://doi.org/10.1007/s00170-018-2938-1
https://doi.org/10.1007/s00170-018-2938-1
Autor:
Ju Yi Lee, Tomi T. Li, Ching Lin Tseng, Yu Lin Hsieh, Jenq Yang Chang, Chien Chieh Lee, Yiin Kuen Fuh
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P355-P361
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54ac1a9e318797860ab7ac946ab41635
https://doi.org/10.1149/2.0041808jss
https://doi.org/10.1149/2.0041808jss
Publikováno v:
Solid-State Electronics. 130:41-44
In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 °C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9786f580f56796736692973ed9f7f7a
https://doi.org/10.1016/j.sse.2017.01.010
https://doi.org/10.1016/j.sse.2017.01.010
Autor:
Ya-Hui Chiou, Hsin-Chuan Cheng, Chien-Chieh Lee, Tomi T. Li, Yiin Kuen Fuh, Song-Ho Wang, Hsueh-Er Chang
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
The growth of chlorinated hydrognated silicon (Si:H:C1) films on Si substrate from trichlorosilane (SiHCl 3 ) using the plasma enhanced chemical vapour deposition system is investigated with optical emission spectroscopy (OES) endpoint detector. Surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::698659d2409c007860eadacc5de76446
https://doi.org/10.1109/cstic.2019.8755637
https://doi.org/10.1109/cstic.2019.8755637
Publikováno v:
IEEE Photonics Journal, Vol 5, Iss 5, Pp 2202606-2202606 (2013)
In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is o
Externí odkaz:
https://doaj.org/article/ad83d2cc3e5f42ce88a6aff8cc22d514