Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Chien Cheng Yang"'
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 70:577-584
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7e8f7f604348bf5e35651cc57c53d3c
https://doi.org/10.1109/tuffc.2023.3261404
https://doi.org/10.1109/tuffc.2023.3261404
Publikováno v:
2016 IEEE International Frequency Control Symposium (IFCS).
The application of etching methods to manufacture high-frequency quartz plates has increased in recent years. Such methods are able to produce thinner quartz components than traditionally cutting methods. The present study used finite element softwar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f08192c009bf856875045f22b1a4448a
https://doi.org/10.1109/fcs.2016.7546732
https://doi.org/10.1109/fcs.2016.7546732
Publikováno v:
Materials Science and Engineering: A. 343:97-106
The effect of calcium cyanamide (CaCN 2 ) additives on the grain growth and electric properties of liquid phase sintered AlN ceramics have been investigated using an X-ray diffractometer (XRD), a scanning electron microscope (SEM), a transmission ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61af1124fe63808a1ab73755958230e0
https://doi.org/10.1016/s0921-5093(02)00382-9
https://doi.org/10.1016/s0921-5093(02)00382-9
Publikováno v:
Journal of the European Ceramic Society. 21:2185-2192
The effect of CaCN 2 addition on the densification and structural development for sintered AlN ceramics was investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and electron diffraction (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99ec7e1a850ef029a0bc61c6c95a2bae
https://doi.org/10.1016/s0955-2219(01)00195-9
https://doi.org/10.1016/s0955-2219(01)00195-9
Publikováno v:
Solid-State Electronics. 44:1483-1486
The GaN homo-junction light-emitting diodes (LEDs) with multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 A thick GaN nucleation layer grown at a lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f835f09172a8693399e961e99a993a
https://doi.org/10.1016/s0038-1101(00)00052-6
https://doi.org/10.1016/s0038-1101(00)00052-6
Publikováno v:
Journal of Applied Physics. 86:6120-6123
In this article, we propose a new buffer structure to obtain the high quality GaN epitaxial layers grown on sapphire substrates by a separate-flow reactor of metalorganic chemical vapor deposition (MOCVD). This buffer structure consists of 200–300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7506d56cc1fdd2d4e53212396b41e4d7
https://doi.org/10.1063/1.371661
https://doi.org/10.1063/1.371661
Publikováno v:
Materials Science and Engineering: B. 68:22-25
High-quality GaN epitaxial films have been grown on sapphire by organometallic vapor phase epitaxy using multiple-pair buffer layers. Each pair of buffer layers consists of a thin GaN nucleation layer grown at a low temperature around 500°C and a th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5064580dd19e7c2abdd0e3ba72b528f4
https://doi.org/10.1016/s0921-5107(99)00318-9
https://doi.org/10.1016/s0921-5107(99)00318-9
Publikováno v:
Journal of Crystal Growth. 206:8-14
In this study, cubic GaN epitaxial films are grown on a 2° miscut GaAs(0 0 1) substrate by hydride vapor-phase epitaxy reactor with a low-temperature GaN buffer layer before the growth of the GaN epitaxy film. X-ray diffraction spectra reveal that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6eb28622dc50f699003c51f22f806b0
https://doi.org/10.1016/s0022-0248(99)00295-x
https://doi.org/10.1016/s0022-0248(99)00295-x
Publikováno v:
Journal of Electronic Materials. 28:1096-1100
GaN epitaxial layers were grown on sapphire substrates in a separate-flow reactor by metalorganic chemical vapor deposition. The flow-rate ratio of H2 on the upper stream to NH3 on the bottom stream is varied from 0.5 to 2. The growth condition and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9e2481c857624fbe72d72f9e03226d1
https://doi.org/10.1007/s11664-999-0244-2
https://doi.org/10.1007/s11664-999-0244-2