Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Chien C. Chiu"'
Autor:
Wen K. Hsu, Nyan H. Tai, K.C. Leou, Lih J. Chen, Chien C. Chiu, Shih H. Tseng, Chi Y. Lee, Jhy H. Wang, Lih J. Chou
Publikováno v:
Carbon. 45:958-964
When fluffy carbon nanotubes (CNTs) are subjected to a photoflash, there is a rapid increase in temperature to over 475 °C within 0.03 s. This is attributed to absorption of the light by the CNTs, which results in the generation of an acoustic wave
Autor:
Chien C. Chiu, Ji-Jung Kai, Fu-Rong Chen, Kwang Kuo Shih, Chang Shyang Jong, Chao Nien Huang, Li Chien Chen, Jin-Kuo Ho, Li Chang
Publikováno v:
physica status solidi (a). 176:773-777
The effect of heat treatment temperature on the microstructure and specific contact resistance of oxidized Ni(5 nm)/Au(5 nm) contacts to p-type GaN was investigated. The minimum specific contact resistance (ρc) obtained was 4 × 10—6 Ω cm2 after
Autor:
L. J. Chen, Jin-Kuo Ho, Chao-Nien Huang, Fu-Rong Chen, Chien C. Chiu, Charng-Shyang Jong, Ji-Jung Kai, Kwang Kuo Shih
Publikováno v:
Journal of Applied Physics. 86:4491-4497
A contact has been developed to achieve a low specific contact resistance to p-type GaN. The contact consisted of a bi-layer Ni/Au film deposited on p-type GaN followed by heat treatment in air to transform the metallic Ni into NiO along with an amor
Publikováno v:
Journal of Materials Research. 10:1099-1107
Epitaxial β-SiC thin films were grown on modified Si(100) substrates from methyltrichlorosilane (CH3SiCl3 or MTS) in a hot wall reactor by using low pressure chemical vapor deposition (LPCVD). At 1150 °C, the growth rate of the β-SiC films was 120
Publikováno v:
Journal of Materials Research. 9:2066-2071
Traditional CVD phase diagrams, which neglect the depletion effects in a hot wall reactor and assume the gaseous species concentrations at the substrate are the same as input concentrations, are at best valid for a cold wall reactor. Due to the const
Publikováno v:
Materials Science and Engineering: B. 22:133-140
Solid solutions of PFN ( Pb ( Fe 1 2 Nb 1 2 ) O 3 ) and PFT ( Pb ( Fe 1 2 Ta 1 2 ) O 3 ) were synthesized by a molten salt method in the temperature range 800–900 °C. The temperatures needed to form the pure perovskite phase of PFN were lower than
Publikováno v:
Journal of Materials Research. 8:2617-2626
Stoichiometric β–SiC thin films with a high preferred orientation of (111) planes were successfully deposited on Si(100) substrates at a relatively low temperature of 1050 °C from the mixture of methyltrichlorosilane (CH3SiCl3 or MTS) and H2 in a
Autor:
Chien C. Chiu, Seshu B. Desu
Publikováno v:
Materials Science and Engineering: B. 21:26-35
Pure, single phase stoichiometric Pb(Fe0.5Nb0.5)O3 (PFN) powders were successfully formed by molten salt synthesis using a mixture of NaCl and KCl salts. The sinterability and changes in microstructure of these powders, and the dielectric properties
Autor:
Seshu B. Desu, Chien C. Chiu
Publikováno v:
Journal of Materials Research. 8:535-544
SiC thin films grown from the reaction between acetylene (C2H2) and the Si(100) substrates in a horizontal hot-wall CVD reactor by different procedures were studied using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM).
Publikováno v:
ChemInform. 22
Pure, single-phase stoichiometric Pb(Fe0.5Nb0.5)O3 (PFN) powders were successfully formed by molten salt synthesis using mixtures of NaCl and KCl salts. Lower temperatures and shorter times (1/2 h at 800°C) were needed for singlephase PFN formation