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pro vyhledávání: '"Chieh-Piao Wang"'
Autor:
Jin-Ji Dai, Thi Thu Mai, Umeshwar Reddy Nallasani, Shao-Chien Chang, Hsin-I Hsiao, Ssu-Kuan Wu, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Chieh-Piao Wang, Luc Huy Hoang
Publikováno v:
Materials; Volume 15; Issue 6; Pages: 2058
The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical vapor deposition (MOCVD). The heavy Fe concentrations employed for the purpose of highly i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f9c81e3eb5a7e2d695ebeebfae68047
https://pubmed.ncbi.nlm.nih.gov/35329508
https://pubmed.ncbi.nlm.nih.gov/35329508
