Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chie-Sheng Liu"'
Autor:
Chie-Sheng Liu, 劉智生
97
The subject of this research is focused on: (1) effect of surface graphitization of the SiC buffer layer on the growth mode and crystallinity 3C-SiC(111) films formed through chemical vapor deposition(CVD); (2) surface carbonization of Si(100
The subject of this research is focused on: (1) effect of surface graphitization of the SiC buffer layer on the growth mode and crystallinity 3C-SiC(111) films formed through chemical vapor deposition(CVD); (2) surface carbonization of Si(100
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/93616201296512982889
Publikováno v:
Progress in Photovoltaics: Research and Applications. 21:326-331
In this paper, we describe a technique for high-quality interface passivation of n-type crystalline silicon wafers through the growth of hydrogenated amorphous Si (a-Si:H) thin layers using conventional plasma-enhanced chemical vapor deposition. We i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5afc499fc0e8584f5964d5625e021019
https://doi.org/10.1002/pip.1189
https://doi.org/10.1002/pip.1189
Publikováno v:
Journal of Physics and Chemistry of Solids. 69:576-579
Surface carbonization of Si(1 0 0) using C 2 H 2 as the carbon source was performed in a cold-wall-type chemical vapor deposition reactor at a low pressure of 5 Torr. The carbonization process as a function of C 2 H 2 partial pressure and treatment t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f0d25895321eb0d90653973c4092e9d
https://doi.org/10.1016/j.jpcs.2007.07.041
https://doi.org/10.1016/j.jpcs.2007.07.041
Publikováno v:
Journal of the American Chemical Society. 130(16)
This paper describes the initial reaction kinetics of Ge deposition after exposure of Si(100)-2 x 1 to GeH4 in a UHV-CVD system. The rate of Ge growth, especially at the wetting layer stage, was investigated using in situ X-ray photoelectron spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8de49424e8d53150b356b0a43096964a
https://pubmed.ncbi.nlm.nih.gov/18366168
https://pubmed.ncbi.nlm.nih.gov/18366168
Publikováno v:
Japanese Journal of Applied Physics. 52:085502
We have studies of the changes in the surface states of carbonized Si(111) substrates treated under various temperature programs prior to high-temperature 3C-SiC film growth in a low pressure chemical vapor deposition system using SiH4, C2H2, and H2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14bdaf598202bc6cbe9b6bbd01296950
https://doi.org/10.7567/jjap.52.085502
https://doi.org/10.7567/jjap.52.085502
Autor:
Yang-Fang Chen, Chia-Yin Wu, Chun-Hsiung Wang, Lu-Sheng Hong, Chun Ying Huang, Ying-Jay Yang, Chie-Sheng Liu, J. C. Chen
Publikováno v:
Applied Physics Letters. 97:013503
Influence of a SiO2 ultrathin film on n-ZnO/p-silicon nanowires photodiodes has been investigated. With a SiO2 thin layer, the diode characteristics can be significantly improved, which exhibits high responsivity under a reverse bias. Based on the el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfb852272509e98b051ed51c81c2a0a2
https://doi.org/10.1063/1.3462319
https://doi.org/10.1063/1.3462319
Publikováno v:
Journal of The Electrochemical Society. 153:G931
We report on the zinc oxide doped indium oxide (ZIO) transparent ohmic contact to the p-GaN. Optimum conditions were selected to minimize the lowest specific contact resistance to 1.4 X 10 -4 Ω cm 2 , as examined by transmission line model after hea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74b36abd27dfed126f24618bb2e96fb3
https://doi.org/10.1149/1.2337769
https://doi.org/10.1149/1.2337769
Autor:
Chun-Ying Huang, Ying-Jay Yang, Ju-Ying Chen, Chun-Hsiung Wang, Yang-Fang Chen, Lu-Sheng Hong, Chie-Sheng Liu, Chia-Yin Wu
Publikováno v:
Applied Physics Letters; 7/5/2010, Vol. 97 Issue 1, p013503, 3p, 2 Diagrams, 2 Graphs
Autor:
Chie-Sheng Liu1, Li-Wei Chou1, Lu-Sheng Hong1 hongls@mail.ntust.edu.tw, Jyh-Chiang Jiang1 jcjiang@mail.ntust.edu.tw
Publikováno v:
Journal of the American Chemical Society. 4/23/2008, Vol. 130 Issue 16, p5440-5442. 3p. 2 Diagrams.