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pro vyhledávání: '"Chib-Yang Pai"'
Autor:
Chih-Hsin Yu, Chib-Yang Pai, Chi-San Wu, Chia-Shiung Tsai, Yeur-Luen Tu, Liou Yuan-Hung, Min-Hwa Chi, Yu-Shen Chen
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 15:478-485
In this paper, the mechanism, inspection, and inline monitor of plasma charging defects found in an active area (AA) corner and edge using a poly-buffer (PB) STI process is reported. These defects are formed by the arcing (or discharging) through wea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebaa60b40712d64a4c5d227922de766c
https://doi.org/10.1109/tsm.2002.804893
https://doi.org/10.1109/tsm.2002.804893
