Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Chiara, Sabbione"'
Autor:
Minh Anh Luong, Nikolay Cherkashin, Béatrice Pecassou, Chiara Sabbione, Frédéric Mazen, Alain Claverie
Publikováno v:
Nanomaterials, Vol 11, Iss 7, p 1729 (2021)
Among the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and is already integrated into many devices. N doping is known to significantly improve some key characteristics such as the thermal stability of materials and the resistance d
Externí odkaz:
https://doaj.org/article/42c2074da7fa4322b3d45ab065accc97
Autor:
Clément Chassain, Andrzej Kusiak, Cécile Gaborieau, Yannick Anguy, Nguyet-Phuong Tran, Chiara Sabbione, Marie-Claire Cyrille, Jean-Luc Battaglia
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters.
Autor:
Fabien Laulagnet, Jacques-Alexandre Dallery, Laurent Pain, Michael May, Béatrice Hemard, Franck Garlet, Isabelle Servin, Chiara Sabbione
Publikováno v:
Novel Patterning Technologies 2023.
Autor:
Rajkiran Tholapi, Manon Gallard, Nelly Burle, Christophe Guichet, Stephanie Escoubas, Magali Putero, Cristian Mocuta, Marie-Ingrid Richard, Rebecca Chahine, Chiara Sabbione, Mathieu Bernard, Leila Fellouh, Pierre Noé, Olivier Thomas
Publikováno v:
Nanomaterials, Vol 10, Iss 6, p 1247 (2020)
Phase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be unders
Externí odkaz:
https://doaj.org/article/084acc192165421a9c9bd9245e7c3f9c
Autor:
Camille Laguna, Mathieu Bernard, Frederic Fillot, Denis Rouchon, Nevine Rochat, Julien Garrione, Lucie Prazakova, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, Simon Martin, Chiara Sabbione, Guillaume Bourgeois, Marie-Claire Cyrille, Liviu Militaru, Abdelkader Souifi, Francois Andrieu, Gabriele Navarro
Publikováno v:
IEEE Transactions on Electron Devices
Autor:
Emmanuel Nolot, Yann Mazel, Jean‐Paul Barnes, Chiara Sabbione, Gabriele Navarro, Agnes Tempez, Sébastien Legendre
Publikováno v:
Surface and Interface Analysis. 52
Autor:
Philippe, Kowalczyk, Françoise, Hippert, Nicolas, Bernier, Cristian, Mocuta, Chiara, Sabbione, Walter, Batista-Pessoa, Pierre, Noé
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 14(24)
Van der Waals layered GeTe/Sb
Autor:
Giusy Lama, Mathieu Bernard, Guillaume Bourgeois, Julien Garrione, Valentina Meli, Niccolo Castellani, Chiara Sabbione, Lucie Prazakova, Diana-Stephany Fernandez Rodas, Emmanuel Nolot, Marie Claire Cyrille, Francois Andrieu, Gabriele Navarro
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2022, 69 (8), pp.4248-4253. ⟨10.1109/TED.2022.3184659⟩
IEEE Transactions on Electron Devices, 2022, 69 (8), pp.4248-4253. ⟨10.1109/TED.2022.3184659⟩
International audience; Sb-rich GeSbTe based Phase-Change Memories (PCM) were studied in the last years for their high switching speed to target Storage Class Memory (SCM) applications. In this work, we show the advantages of an engineered Multilayer
Autor:
Françoise Hippert, Philippe Kowalczyk, Nicolas Bernier, Chiara Sabbione, Xavier Zucchi, Damien Térébénec, Cristian Mocuta, Pierre Noé
Publikováno v:
Journal of Physics D: Applied Physics; 4/8/2020, Vol. 53 Issue 15, p1-1, 1p
Autor:
Pierre Noé, Chiara Sabbione, Niccolo Castellani, Guillaume Veux, Gabriele Navarro, Véronique, Sousa, Françoise Hippert, francesco dacapito
Publikováno v:
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::11dd27e1c05848c4501297c656d367f5
http://stacks.iop.org/0022-3727/49/i=3/a=035305
http://stacks.iop.org/0022-3727/49/i=3/a=035305