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Publikováno v:
Japanese Journal of Applied Physics. 41:6525-6528
Thermal diffusion of copper in a Cu/TaN/Si-sub sample was investigated after annealing at 630°C for 60 min. The interface morphology, copper silicide grains and SiO2 thin layer were observed using high resolution transmission electron microscope (HR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aaefb532c42338377e48297dfaf2402
https://doi.org/10.1143/jjap.41.6525
https://doi.org/10.1143/jjap.41.6525
