Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Chiao-Wei Tseng"'
Autor:
Chiao‐Wei Tseng, Chenyu Wen, Ding‐Chi Huang, Chin‐Hung Lai, Si Chen, Qitao Hu, Xi Chen, Xingxing Xu, Shi‐Li Zhang, Yu‐Tai Tao, Zhen Zhang
Publikováno v:
Advanced Science, Vol 7, Iss 2, Pp n/a-n/a (2020)
Abstract Knowledge of interfacial interactions between analytes and functionalized sensor surfaces, from where the signal originates, is key to the development and application of electronic sensors. The present work explores the tunability of pH sens
Externí odkaz:
https://doaj.org/article/bdc5b0ab17b5447cad57ec9ee08f3a09
Autor:
Chiao-Wei Tseng, Ming-Hsi Chiang, Yu-Tai Tao, Chung-Yu Tseng, Hsiu-Hui Chen, Kai-Ti Chu, Yu-Chiao Liu, Yu-Lun Kuo, Akinori Saeki
Publikováno v:
ACS Applied Polymer Materials. 2:248-255
Hexa-peri-hexabenzocoronene (HBC) derivatives tend to form discotic columnar liquid crystalline (DCLC) phases capable of charge transport and anisotropic photoresponses. However, their noncovalentl...
Autor:
Yu-Tai Tao, Ding-Chi Huang, Chiao-Wei Tseng, Chun-Wei Pao, Han-Li Yang, Fang-Cheng Li, Hsieh-Cheng Lin
Publikováno v:
Chemistry (Weinheim an der Bergstrasse, Germany). 26(61)
A series of linear carboxylic acids containing diacetylenic units at different positions along the chain (C12 H25 (C≡C)2 (CH2 )n COOH, n=7-11) were vacuum-deposited on clean silica substrates. The morphologies of the initial films after UV irradiat
Autor:
Chin-Ti Chen, Hui-Ping Wu, Meng-Yu Xie, Chen-Hsiung Hung, Mario Leonardus, Chiao-Wei Tseng, Eric Wei-Guang Diau, Shiang Lan, Sandeep B. Mane, Albertus Adrian Sutanto, Shih-Chieh Yeh, Chih-Fu Cheng
Publikováno v:
Solar Energy Materials and Solar Cells. 172:270-276
The formation of a dense and uniform perovskite film with large grain is an important factor for getting excellent device performance. Here, we report an optimized solvent-assisted crystallization procedure followed by a delayed annealing for easy an
Autor:
Jiwei Zhai, Chiao-Wei Tseng, Haixue Yan, Graham C. Smith, Bin Yang, Yaqiong Wang, Steve Dunn, Haibin Zhang, Feng Li, Zhen Zhang, Man Zhang, Jianguo Liu
Publikováno v:
Advanced Energy Materials. 10:2001802
Ferroelectric materials exhibit anomalous behavior due to the presence of domains and domain walls which are related to the spontaneous polarization inherent in the crystal structure. Control of fe ...
Publikováno v:
ACS Applied Materials & Interfaces. 7:9767-9775
A flexible, low-voltage, and nonvolatile memory device was fabricated by implanting a functional monolayer on an aluminum oxide dielectric surface in a pentacene-based organic transistor. The monolayer-forming molecule contains a phosphonic acid grou
Publikováno v:
Organic Electronics. 13:1436-1442
Hybrid films of pentacene and aluminum nanoparticles were prepared by depositing pentacene on a SiO 2 surface decorated with aluminum nanoparticles and used as the active channel materials in a thin film transistor. Surface pre-treatment of the alumi
Autor:
Yu-Tai Tao, Chiao-Wei Tseng
Publikováno v:
Electrical Memory Materials and Devices ISBN: 9781782621164
In this chapter recent developments of transistor memory devices are reviewed, with particular focus on non-volatile organic-based transistor memory. After a brief introduction to the operation principles of memory devices, selected examples are intr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19f580c04306ef8ffeeeb24fd28ae557
https://doi.org/10.1039/9781782622505-00295
https://doi.org/10.1039/9781782622505-00295
Autor:
Chia-Hung Lin, Hung-chung Wu, Kuei-Jung Chao, Shiann-Horng Chen, Chiao-Wei Tseng, Chien-Chung Lin
Publikováno v:
Applied Catalysis A: General. 203:211-220
Reaction mechanism and scheme of hydroconversion of n -heptane catalyzed by platinum-loaded H-form mordenite and beta zeolites has been studied. Product distributions are measured via conversion and reaction pressure in the range of 1–40.8 atm at a
Publikováno v:
ACS applied materialsinterfaces. 5(19)
Gold nanoparticles (Au-NPs) with surfaces covered with a self-assembled monolayer of azobenzene derivatives were prepared at the interface of dielectric insulator SiO2 and pentacene thin film. Transistors constructed with these composite channel mate