Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Chiao-Ti Huang"'
Autor:
Huai-An Chin, Sheng Mao, Chiao-Ti Huang, Kwaku K. Ohemeng, Sigurd Wagner, Prashant K. Purohit, Michael C. McAlpine
Publikováno v:
Extreme Mechanics Letters. 2:20-27
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db882ea3b0a84b1849c5c0d9ef5a72a
https://doi.org/10.1016/j.eml.2014.12.009
https://doi.org/10.1016/j.eml.2014.12.009
Publikováno v:
ECS Transactions. 53:45-50
We report the lowest electron density (4.9×1010 cm-2 and 1.1×1011 cm-2) and high mobility (~400,000 cm2/Vs and ~200,000 cm2/Vs) of undoped enhancement-mode Si/SiGe two-dimensional electron gases comparing to samples previously reported with similar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::076b69a833c1f29675543f1238a52b18
https://doi.org/10.1149/05303.0045ecst
https://doi.org/10.1149/05303.0045ecst
Publikováno v:
ECS Transactions. 50:145-149
We reported an extremely low electron density (8.3 x 1010 cm-2) of a modulation-doped Si/SiGe two-dimensional electron gas by Schottky gating. Effective Schottky gating with extremely low gate leakage current was enabled by low-temperature chemical v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d3c35d115c6044948c1efb77d33683a
https://doi.org/10.1149/05006.0145ecst
https://doi.org/10.1149/05006.0145ecst
Publikováno v:
ECS Transactions. 25:327-338
A methodology to evaluate the non-uniformity phenomena in MOS structure from magnified C-V curve is proposed. With considering the effective oxide charge influence on inversion to deep depletion region, the localized injection of avalanche hot carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::392d209f881b3d6c7f91f18cd484f7d6
https://doi.org/10.1149/1.3206631
https://doi.org/10.1149/1.3206631
Publikováno v:
IEEE Electron Device Letters. 34:21-23
Successful lateral electrical isolation of silicon 2-D electron gases (2DEGs) at liquid helium temperature (4.2 K) by ion implantation is demonstrated. The sheet resistance of the implanted regions can be achieved as high as 1 ×1013 Ω/□ at 4.2 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef773ba70ca2218b7e0f3047d1cfd7cd
https://doi.org/10.1109/led.2012.2228160
https://doi.org/10.1109/led.2012.2228160
Publikováno v:
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).
Si quantum dots formed in a Si/SiGe two-dimensional gas (2DEG) are a promising candidate for the realization of solidstate quantum computation. To achieve effective Schottky gating for charge manipulation in the normal structures, a sharp phosphorus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::405f6168373ca2852883278079ed9b13
https://doi.org/10.1109/istdm.2012.6222436
https://doi.org/10.1109/istdm.2012.6222436
Publikováno v:
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).
Quantum dot devices in the Si/SiGe material system are a promising candidate to implement quantum computation due to the weak nature of its nuclear spin. A Schottky split-gate on a Si/SiGe modulation-doped two-dimensional electron gas (2DEG) with neg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbb1a17f97237d97501ae848c9ff111b
https://doi.org/10.1109/istdm.2012.6222514
https://doi.org/10.1109/istdm.2012.6222514
Publikováno v:
Applied Physics Letters. 104:243510
We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea913505d7fbc9e79cb25a59d47b20ac
https://doi.org/10.1063/1.4884650
https://doi.org/10.1063/1.4884650
Publikováno v:
Applied Physics Letters. 103:162105
Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in isotopically enriched 28Si with extremely high mobility (522 000 cm2/V s) are presented. The samples were grown by chemical vapor deposition using enriched silane. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1aef24a7344f87eac9f11d03a133d56
https://doi.org/10.1063/1.4824729
https://doi.org/10.1063/1.4824729
Publikováno v:
Applied Physics Letters. 101:142112
The surface segregation of phosphorus in relaxed Si0.7Ge0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8194042fb38814d5966c7c59d6a83a95
https://doi.org/10.1063/1.4757123
https://doi.org/10.1063/1.4757123