Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chiaki Takazawa"'
Publikováno v:
CrystEngComm. 20:1774-1778
Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer si
Autor:
Makoto Fujita, Kei Hasegawa, Chiaki Takazawa, Xiao-Mei Zhang, Anatolii Lukianov, Manabu Ihara, Suguru Noda
Publikováno v:
ECS Transactions. 75:11-23
A fabrication process of monocrystalline thin films for Si solar cells was developed that uses epitaxial growth and layer transfer process for low fabrication cost and high photoelectric conversion efficiency. Fabrication of high crystalline epitaxia
Publikováno v:
ECS Meeting Abstracts. :1426-1426
1. Introduction Monocrystalline Si solar cell (c-Si SC) prepared from Si wafer which cut and sliced from Si ingot exhibit kerf loss and also has extra thickness of Si wafer for power generation given absorbance. In this study, we therefore focused on
Publikováno v:
Applied Physics Letters. 108:213904
Thin-film crystalline silicon is promising for photovoltaic application to reduce the cost of photovoltaic energy. Porous silicon structures have been intensively studied as a seed layer for epitaxial growth of thin Si film and layer-transfer process