Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Chia-You Liu"'
Autor:
Wei-Chih Hou, Nai-Wen Hsu, Tz-Ming Wang, Chia-You Liu, Hsiang-Shun Kao, Miin-Jang Chen, Jiun-Yun Li
Publikováno v:
ACS Applied Electronic Materials. 4:2879-2884
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc712887a23b998aa0b5250fb72ef80
https://doi.org/10.1021/acsaelm.2c00364
https://doi.org/10.1021/acsaelm.2c00364
Autor:
Andrew J. Miller, Will J. Hardy, Dwight R. Luhman, Mitchell Brickson, Andrew Baczewski, Chia-You Liu, Jiun-Yun Li, Michael P. Lilly, Tzu-Ming Lu
Publikováno v:
Physical Review B. 106
Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quantum dot to qubit logic demonstrations. Here we present a measurement of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::356a69c01799cd003c846a0ec9e1a7af
https://doi.org/10.1103/physrevb.106.l121402
https://doi.org/10.1103/physrevb.106.l121402
Autor:
Chia‐You Liu, Kai‐Ying Tien, Po‐Yuan Chiu, Yu‐Jui Wu, Yen Chuang, Hsiang‐Shun Kao, Jiun‐Yun Li
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(41)
Tunnel field-effect transistors (TFETs) are a promising candidate for low-power applications owing to their steep subthreshold swing of sub-60 mV per decade. For silicon- or germanium-based TFETs, the drive current is low due to the indirect band-to-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5abdd3b03430006168055e6b14d145ba
https://pubmed.ncbi.nlm.nih.gov/36030362
https://pubmed.ncbi.nlm.nih.gov/36030362
Autor:
Yu-Jui Wu, Chih-Ying Chiang, Hung-Yu Tsao, Tsung-Ying Li, Tz-Ming Wang, Min-Jui Lin, Chia-You Liu, Ching-Chen Yeh, Cheng-Hsueh Yang, Chi-Te Liang, Jiun-Yun Li
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8b6c125262dff8f1e3b7b48f625b380
https://doi.org/10.1109/vlsi-tsa54299.2022.9770981
https://doi.org/10.1109/vlsi-tsa54299.2022.9770981
Autor:
Andrew Miller, Mitchell Brickson, Will Hardy, Chia-You Liu, Jiun-Yun Li, Andrew Baczewski, Michael Lilly, Tzu-Ming Lu, Dwight Luhman
Publikováno v:
Proposed for presentation at the APS March Meeting 2021 held March 15-19, 2021, US..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e4dd3f3c3f24da5c0086276951b2ebe
https://doi.org/10.2172/1855743
https://doi.org/10.2172/1855743
Publikováno v:
ECS Meeting Abstracts. :2416-2416
Germanium has recently gained attention due to its potential for spintronic applications [1]. While most prior studies were done on modulation-doped Ge/GeSi heterostructures, there have been few reports on the mobility-limiting mechanisms in undoped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21c629003c61240d9089815208f888ea
https://doi.org/10.1149/ma2019-02/54/2416
https://doi.org/10.1149/ma2019-02/54/2416
Autor:
Yen Chuang, Po-Yuan Chiu, Ching-Tsung Huang, Pao-Chuan Shih, Chia-You Liu, Guang-Li Luo, Jiun-Yun Li
Publikováno v:
ECS Meeting Abstracts. :868-868
High-mobility channel materials are important to extend the CMOS technology to beyond 3-nm node. GeSn p-MOSFETs with a record-high hole mobility of 845 cm2/V-s and a high drive current of > 1850 A/m were demonstrated [1, 2]. While the high-performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f4d60ea7276d239a6ebdc0a0149e58
https://doi.org/10.1149/ma2019-02/13/868
https://doi.org/10.1149/ma2019-02/13/868