Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chia-Wen Zhong"'
Autor:
Mochamad Januar, Suhendro Purbo Prakoso, Chia-Wen Zhong, Horng-Chih Lin, Chuan Li, Jang-Hsing Hsieh, Kuo-Kang Liu, Kou-Chen Liu
Publikováno v:
ACS applied materialsinterfaces. 14(41)
Over the past decade, SnO has been considered a promising p-type oxide semiconductor. However, achieving high mobility in the fabrication of p-type SnO films is still highly dependent on the post-annealing procedure, which is often used to make SnO,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bf9ade4516cd0582e705a0e3d6d2313
https://pubmed.ncbi.nlm.nih.gov/36203276
https://pubmed.ncbi.nlm.nih.gov/36203276
Publikováno v:
IEEE Electron Device Letters. 36:1053-1055
$p$ -type SnO thin-film transistors (TFTs) using a nominally symmetrical double-gated (DG) structure were studied in this letter. The top and bottom gates can be biased independently (single-gated mode) or jointly to switch the device (DG mode). For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c6bfc8b815f3022aff6536e882aa89
https://doi.org/10.1109/led.2015.2465144
https://doi.org/10.1109/led.2015.2465144
Autor:
Chun Chih Kuo, Horng-Chih Lin, Kow-Ming Chang, Ming Jinn Tsai, Wen Hsien Tzeng, Frederick T. Chen, Kou-Chen Liu, Yi Chun Chan, Chia Wen Zhong, Pang-Shiu Chen, Heng Yuan Lee
Publikováno v:
Surface and Coatings Technology. 231:563-566
In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfO x /TiN capacitor structure is investigated. Switching parameters, including set and reset voltage v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8657ed921c41cfaf7f3a9cf8c3534482
https://doi.org/10.1016/j.surfcoat.2012.07.039
https://doi.org/10.1016/j.surfcoat.2012.07.039
Autor:
Chun Chih Kuo, Horng-Chih Lin, Heng Yuan Lee, Chia Wen Zhong, Kow-Ming Chang, Wen Hsien Tzeng, Feng-Yu Tsai, Ming Hong Tseng, Yi Chun Chan, Kou-Chen Liu, Pang-Shiu Chen, Frederick T. Chen, Ming Jinn Tsai
Publikováno v:
Thin Solid Films. 520:3415-3418
A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/…/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b345f1dc3befd33115c707cf5ce0e0
https://doi.org/10.1016/j.tsf.2011.10.118
https://doi.org/10.1016/j.tsf.2011.10.118
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afa8cccfe1df88628b766ffcfee8d5bb
https://doi.org/10.1109/ipfa.2015.7224339
https://doi.org/10.1109/ipfa.2015.7224339
Publikováno v:
Japanese Journal of Applied Physics. 55:04EG02
In this work, we study the impact of gate dielectrics on the characteristics of bottom-gated tin-oxide thin-film transistors annealed in an oxygen ambience at 300 °C for various periods. SiO2, HfO2, and Al2O3 are employed as the gate dielectric in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68f25bb1814c63cc7e48cd7e86aab494
https://doi.org/10.7567/jjap.55.04eg02
https://doi.org/10.7567/jjap.55.04eg02
Publikováno v:
Japanese Journal of Applied Physics. 55:016501
In this work, we study the properties of tin oxide films, which were annealed in oxygen ambient for various periods. The as-deposited tin oxides are tin-dominant and, from the Hall measurements, they are of the n-type with high electron concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dddf8a1e90ad5426358552831d75734e
https://doi.org/10.7567/jjap.55.016501
https://doi.org/10.7567/jjap.55.016501
Publikováno v:
Japanese Journal of Applied Physics; Apr2016, Vol. 55 Issue 4s, p1-1, 1p
Publikováno v:
Japanese Journal of Applied Physics; Jan2016, Vol. 55 Issue 1, p1-1, 1p