Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chia-Tsong Chen"'
Autor:
Shinichi Takagi, Chia-Tsong Chen, Xueyang Han, Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka
Publikováno v:
ECS Transactions. 109:59-71
According to the CMOS roadmap, CMOS after the 2 nm technology node is supposed to change to a nano-sheet structure, where the continuous reduction in channel film thickness is favorable in terms of device scaling. However, one of the biggest challeng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e369a0f9e6b6ff8c7ca9d4c3c4c98a00
https://doi.org/10.1149/10904.0059ecst
https://doi.org/10.1149/10904.0059ecst
Autor:
Ryo Yokogawa, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi, Atsushi Ogura
Publikováno v:
ECS Transactions. 109:351-357
1. Background and purpose Strain techniques are one of the principal technology boosters for the realization of high-performance logic devices composed of group IV semiconductors such as Si, Ge and their alloy. Recently, it is gradually difficult to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2de6285c9db12553315aa6d8790c1f16
https://doi.org/10.1149/10904.0351ecst
https://doi.org/10.1149/10904.0351ecst
Publikováno v:
IEEE Transactions on Electron Devices. 69:2115-2121
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3449444d79c61f37acccaa9a3d780bc
https://doi.org/10.1109/ted.2022.3143484
https://doi.org/10.1109/ted.2022.3143484
Publikováno v:
IEEE Transactions on Electron Devices. 69:25-30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d11c9643c69daffc5800d8bbe6f41b01
https://doi.org/10.1109/ted.2021.3130221
https://doi.org/10.1109/ted.2021.3130221
Autor:
Shinichi Takagi, Kei Sumita, Chia Tsong Chen, Xueyang Han, Kasidit Toprasertpong, Mitsuru Takenaka
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24b302d12605a38d3739d71612a1e4a
https://doi.org/10.1109/snw56633.2022.9889013
https://doi.org/10.1109/snw56633.2022.9889013
Autor:
Xueyang Han, Chia-Tsong Chen, Mengnan Ke, Ziqiang Zhao, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1089
In this work, the effects of post-deposition annealing (PDA) on Al2O3/GeO x /(111) and (100) n-Ge structures are experimentally studied with changing annealing temperatures from 300 °C to 650 °C in a vacuum, N2 and O2 atmosphere in order to clarify
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d32ed778890d31e69344340f9c14937f
https://doi.org/10.35848/1347-4065/acbb89
https://doi.org/10.35848/1347-4065/acbb89
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
We report the evaluation of 3-dimensional strain distribution in self-aligned SiGe nanoshells that were created by the Ge nanospheres (NPs) penetrating into the Si substrate using a novel selective oxidation of SiGe nanopillars approach. The Ge conte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4408cb3e2d75f9733e3809c3ad42cb2
https://doi.org/10.1109/edtm.2019.8731021
https://doi.org/10.1109/edtm.2019.8731021
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO 2 /SiGe-channels. An exquisitely controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f39677f4c83e0e8a19854ce67a2537a
https://doi.org/10.1109/edtm.2018.8421489
https://doi.org/10.1109/edtm.2018.8421489
Publikováno v:
AIP Advances, Vol 9, Iss 5, Pp 055330-055330-6 (2019)
We report the novel tunability of Ge content, thickness, and even curvature/shape in self-aligned, hemispherical-shell shaped SiGe recess channels created in Si substrates by Ge nanospheres that are proximally located to these nanoshells. The hemisph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1a8e1823b2df4643e8ba22b08982acd
https://doaj.org/article/673179f0426a451cb558354a5a9e97e8
https://doaj.org/article/673179f0426a451cb558354a5a9e97e8