Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Chia-Hsun Hsu"'
Autor:
Chia-Hsun Hsu, Ka-Te Chen, Lu-Sheng Liang, Peng Gao, Sin-Liang Ou, Wan-Yu Wu, Pao-Hsun Huang, Shui-Yang Lien
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 49-56 (2021)
In this study, titanium dioxide (TiO2) films are prepared using spatial atomic layer deposition (sALD) as an additional compact layer of tin oxide (SnO2) electronic transport layer-based perovskite solar cells. The experimental results show that the
Externí odkaz:
https://doaj.org/article/362c0389275944499c83791419ba6598
Autor:
Chia-Hsun Hsu, Shih-Mao Liu, Wan-Yu Wu, Yun-Shao Cho, Pao-Hsun Huang, Chien-Jung Huang, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Arabian Journal of Chemistry, Vol 13, Iss 11, Pp 8239-8247 (2020)
In this study, nanostructured pyramidal black silicon is prepared by metal assisted chemical etching method, in which the silver nitrate (AgNO3) is used as the metal catalyst. Effects of the concentration of AgNO3 on passivation and optical propertie
Externí odkaz:
https://doaj.org/article/e87a858122154e3097430fab82e467f4
Autor:
Fang-Bin Ren, Shi-Cong Jiang, Chia-Hsun Hsu, Xiao-Ying Zhang, Peng Gao, Wan-Yu Wu, Yi-Jui Chiu, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Molecules, Vol 27, Iss 23, p 8123 (2022)
Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic la
Externí odkaz:
https://doaj.org/article/c3c5c6ded39b41fd9ad9e09d2a608de9
Autor:
Chia-Hsun Hsu, Yun-Shao Cho, Wan-Yu Wu, Shui-Yang Lien, Xiao-Ying Zhang, Wen-Zhang Zhu, Sam Zhang, Song-Yan Chen
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-10 (2019)
Abstract In this study, aluminum oxide (Al2O3) films were prepared by a spatial atomic layer deposition using deionized water and trimethylaluminum, followed by oxygen (O2), forming gas (FG), or two-step annealing. Minority carrier lifetime of the sa
Externí odkaz:
https://doaj.org/article/dfdf84826a70499da18f8465022c6490
Autor:
Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Wan-Yu Wu, Sin-Liang Ou, Song-Yan Chen, Wei Huang, Wen-Zhang Zhu, Fei-Bing Xiong, Sam Zhang
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract In this work, hafnium oxide (HfO2) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on
Externí odkaz:
https://doaj.org/article/7360e0efe40c4405b712f373bf9963ee
Autor:
Pao-Hsun Huang, Zhi-Xuan Zhang, Chia-Hsun Hsu, Wan-Yu Wu, Sin-Liang Ou, Chien-Jung Huang, Dong-Sing Wuu, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Nanomaterials, Vol 12, Iss 16, p 2859 (2022)
The promising functional tin oxide (SnOx) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of SnOx can be described as common n-type SnO2 and p-type Sn3O4. In this study, the function
Externí odkaz:
https://doaj.org/article/8b7a2fb0fc11429a84e5c40979578bb4
Autor:
Yue Yang, Xiao-Ying Zhang, Chen Wang, Fang-Bin Ren, Run-Feng Zhu, Chia-Hsun Hsu, Wan-Yu Wu, Dong-Sing Wuu, Peng Gao, Yu-Jiao Ruan, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1510 (2022)
Amorphous Gallium oxide (Ga2O3) thin films were grown by plasma-enhanced atomic layer deposition using O2 plasma as reactant and trimethylgallium as a gallium source. The growth rate of the Ga2O3 films was about 0.6 Å/cycle and was acquired at a tem
Externí odkaz:
https://doaj.org/article/f4b12a2d6222432485c5b0bab2d22868
Autor:
Chia-Hsun Hsu, Ka-Te Chen, Ling-Yan Lin, Wan-Yu Wu, Lu-Sheng Liang, Peng Gao, Yu Qiu, Xiao-Ying Zhang, Pao-Hsun Huang, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Nanomaterials, Vol 11, Iss 6, p 1504 (2021)
Tantalum (Ta)-doped titanium oxide (TiO2) thin films are grown by plasma enhanced atomic layer deposition (PEALD), and used as both an electron transport layer and hole blocking compact layer of perovskite solar cells. The metal precursors of tantalu
Externí odkaz:
https://doaj.org/article/27dab1b17f0545eca72b9d78fae2e69b
Autor:
Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Song-Yan Chen, Wei Huang, Chih-Hsiang Yang, Chung-Yuan Kung, Wen-Zhang Zhu, Fei-Bing Xiong, Xian-Guo Meng
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Abstract Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. How
Externí odkaz:
https://doaj.org/article/b777a281e97645849db3cd8e05c1d57b
Autor:
Ming-Jie Zhao, Zhi-Xuan Zhang, Chia-Hsun Hsu, Xiao-Ying Zhang, Wan-Yu Wu, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 978 (2021)
Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-prec
Externí odkaz:
https://doaj.org/article/96c60745d2274b48b3d1c88fb2d7f8bc