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pro vyhledávání: '"Chia-Chin Kevin Cheng"'
Autor:
Chien-Ting Wu, Wen-Kuan Yeh, Ming-Yang Li, Yu-Lun Chueh, Chenming Hu, Bo-Wei Wu, Chang-Hsien Lin, Yi-Ju Chen, Min-Cheng Chen, Chun-Chi Chen, Kai-Shin Li, Cho-Lun Hsu, Jia-Min Shieh, Lain-Jong Li, Fu-Liang Yang, Chia-Chin Kevin Cheng
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
A U-shape MoS 2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS 2 deposition, thin MoS 2 is well deposited in the channel region any w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b4b5d61f297c44d8d3a2406e32f80ed
https://doi.org/10.1109/vlsit.2016.7573375
https://doi.org/10.1109/vlsit.2016.7573375
