Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Chia Sung Chiu"'
Autor:
Yi-Wen Huang, Chia-Sung Chiu, Kun-Ming Chen, Guo-Wei Huang, Chia-Wei Chuang, Chao-Wen Lin, Lin-Kun Wu
Publikováno v:
2022 Asia-Pacific Microwave Conference (APMC).
Autor:
Guo-Wei Huang, Fu-Kuo Hsueh, Kun-Ming Chen, Bo-Yuan Chen, Chun Chi Chen, Chia-Sung Chiu, Hsiu-Chih Chen, Edward Yi Chang
Publikováno v:
IEEE Transactions on Electron Devices. 65:4225-4231
Analog and RF characteristics of power FinFET transistors with different drain-extension structures are investigated for microwave integrated circuit applications. The power FinFETs were designed based on the drain-extended MOSFET structure and fabri
Autor:
Bo-Yuan Chen, Chia-Wei Chuang, Guo-Wei Huang, Kun-Ming Chen, Zhi-Xin Yang, Chia-Sung Chiu, Ting-Yi Tsai, Hsin-Hui Hu
Publikováno v:
2019 IEEE Asia-Pacific Microwave Conference (APMC).
The large-signal characteristics of power FinFETs based on the X-parameter model are presented. FinFET devices with various drain-extension structures were fabricated using a standard silicon FinFET process. The X-parameters were measured using a non
Autor:
Lin-Kun Wu, Sheng-Kai Peng, Guo-Wei Huang, Kun-Ming Chen, Yu-Ting Ke, Yi-Tang Chen, Chia-Sung Chiu, Chia-Wei Chuang
Publikováno v:
2018 Asia-Pacific Microwave Conference (APMC).
A miniature 92–95 GHz on-chip branch-line coupler (BLC) employing a slow-wave microstrip line is proposed herein. The ground metal plane beneath the signal line is periodically slotted, and the coupler can be highly miniaturized owing to the short
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 59:638-643
This paper presents an annular-structure lateral-diffused metal-oxide-semiconductor (LDMOS) RF transistor using a 0.5-μm LDMOS process. This paper also examines the dc, small-signal, and large-signal characteristics of RF LDMOS transistors with diff
Autor:
Tsun-Lai Hsu, Lin-Kun Wu, Hua-Chou Tseng, Guo-Wei Huang, Yueh-Hua Wang, Chia-Sung Chiu, Kun-Ming Chen, Ming-Hsiang Cho
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:2926-2934
A general three-port S-parameter de-embedding method using shield-based test structures for microwave on-wafer characterization is presented in this paper. This method does not require any physical equivalent-circuit assumption for the surrounding pa
Publikováno v:
IEICE Transactions on Electronics. :845-850
SUMMARY In this study, a cascade open-short-thru (COST) deembedding procedure is proposed for the first time for on-wafer device characterization in the RF/microwave frequency regime. This technique utilizes the “open” and “short” dummy struc
Autor:
Ming-Yi Chen, Chia-Sung Chiu, Kai-Li Wang, Tiao-Yuan Huang, Chun-Hao Chen, Horng-Chih Lin, Brenda Jaw, Kun-Ming Chen, Guo-Wei Huang, Yu-Chi Yang, Bo-Yuan Chen
Publikováno v:
IEEE Electron Device Letters. 34:1085-1087
In this letter, we proposed a new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors. In a multifinger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases
Autor:
Chih-Hsueh Hon, Pai-Chu Kao, Chen-Chia Fan, Wei-Chain Kung, Zih-Wun Wang, Chia-Sung Chiu, Chien-Sheng Hsieh, E.S. Jeng
Publikováno v:
IEEE Transactions on Electron Devices. 51:1811-1817
This work presents the characteristics of a two-bit-per-cell charge-trapping nonvolatile memory (NVM) device by using gate-to-drain nonoverlapped implanted (NOI) n-MOSFETs. Hot carriers are generated in NOI devices and injected into the silicon nitri
Autor:
Kun-Ming Chen, Ming-Yi Chen, Chia-Sung Chiu, Wen-Shiang Liao, Kai-Li Wang, Bo-Yuan Chen, Yu-Chi Yang, Guo-Wei Huang, Chee-Wee Liu, Chih-Hua Hsiao
Publikováno v:
IEEE Electron Device Letters. 33:471-473
The effects of mechanical stress on the dc and high-frequency performances of laterally diffused MOS (LDMOS) transistors with different layout structures were investigated by using the wafer bending method. A 3.1% peak cutoff frequency (fT) enhanceme