Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Chia Chiang Chang"'
Autor:
Jia-Ling Wu, Yu-Cheng Chen, Bo-Yuan Su, Su-Yin Liu, Po-Hung Kuo, Han Yu Lin, Chia-Chiang Chang, Chin-Jyi Wu, Sheng-Yuan Chu
Publikováno v:
IEEE Transactions on Electron Devices. 61:1403-1409
In this paper, bottom-gate thin-film transistors (TFTs) with zinc oxide (ZnO) channels were grown on Si substrates with an SiO2 dielectric layer via the radio-frequency sputtering technique. The ZnO films were then subjected to 16 min of ultraviolet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce410b6c0f3726dff7f00e9326548ddc
https://doi.org/10.1109/ted.2014.2309636
https://doi.org/10.1109/ted.2014.2309636
Publikováno v:
Advanced Materials Research. 939:465-472
Deposition of gallium-doped zinc oxide (GZO) thin films using atmospheric pressure plasma jet (APPJ) system is presented in this work. High quality GZO films were demonstrated: The resistivity of as-deposited film achieves up to ~7×10-4ohm-cm, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ed85843f248708be39df20c0bce965
https://doi.org/10.4028/www.scientific.net/amr.939.465
https://doi.org/10.4028/www.scientific.net/amr.939.465
Autor:
Han Yu Lin, Chia Chiang Chang, Yu-Cheng Chen, Ssu Yin Liu, Jia Ling Wu, Bo Yuan Su, Sheng-Yuan Chu, Chin Jyi Wu
Publikováno v:
Journal of Alloys and Compounds. 592:35-41
In this research, top-gate bottom-contact thin-film transistors (TFTs) made with amorphous indium gallium zinc oxide (α-IGZO) active layers were grown using the radio-frequency sputtering technique. Two kinds of source and drain (S/D) electrodes, na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2478bf9751771d74a9cd12de187fff10
https://doi.org/10.1016/j.jallcom.2013.12.115
https://doi.org/10.1016/j.jallcom.2013.12.115
Autor:
Chia-Chiang Chang, Ssu-Yin Liu, Chin-Jyi Wu, Yu-Cheng Chen, Sheng-Yuan Chu, Han Yu Lin, Jia-Ling Wu, Bo-Yuan Su
Publikováno v:
Ceramics International. 40:2419-2425
In this research, bottom-gate thin film transistors (TFTs) of amorphous indium gallium zinc oxide (α-IGZO)-based active layers were grown by the radio-frequency sputtering technique. The device characteristics of two kinds of TFT structures, namely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b4b67af3a4c6c62ece81e19aadfd490
https://doi.org/10.1016/j.ceramint.2013.08.015
https://doi.org/10.1016/j.ceramint.2013.08.015
Autor:
Po-Ching Ho, Chia-Chiang Chang, Atthaporn Ariyarit, Chin-Jyi Wu, Jui-Mei Hsu, Kow-Ming Chang, Kuo-Hui Yang
Publikováno v:
Thin Solid Films. 548:460-464
article i nfo To enhance the light-trapping qualities of silicon thin-film solar cells, the use of transparent conductive oxide with high haze and high conductivity is essential. This study investigated an eco-friendly technique that used bi- layer G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e65e3bede44f21216b157347f638b92
https://doi.org/10.1016/j.tsf.2013.09.082
https://doi.org/10.1016/j.tsf.2013.09.082
Autor:
Jui Mei Hsu, Kuo Hui Yang, Kow-Ming Chang, Chin Jyi Wu, Chia Chiang Chang, Po Ching Ho, Shu Hung Yu
Publikováno v:
Applied Surface Science. 276:756-760
One of the essential applications of transparent conductive oxides is as front electrodes for superstrate silicon thin-film solar cells. Textured TCO thin films can improve absorption of sunlight for an a-Si:H absorber during a single optical path. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf370c401b3a9c5cfb481b23aa50304e
https://doi.org/10.1016/j.apsusc.2013.03.165
https://doi.org/10.1016/j.apsusc.2013.03.165
Autor:
Yu-Cheng Chen, Jia-Ling Wu, Han Yu Lin, Chin-Jyi Wu, Yung Der Juang, Sheng-Yuan Chu, Chia-Chiang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 60:2324-2330
ZnO:Ga (GZO) transparent conducting oxide (TCO) films are deposited on flexible polyethersulfone (PES) substrates using the radio frequency sputtering technique. The bending durability of flexible TCOs is improved by inserting 100-nm-thick ZnO buffer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f62a5022be18e6a26c24001921370b
https://doi.org/10.1109/ted.2013.2259491
https://doi.org/10.1109/ted.2013.2259491
Autor:
Chia-Chiang Chang, Han Yu Lin, Yung Der Juang, Sheng-Yuan Chu, Jia-Ling Wu, Yu-Cheng Chen, Chin-Jyi Wu
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P115-P119
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3776eb678be270d7e8668bd46628d70d
https://doi.org/10.1149/2.007304jss
https://doi.org/10.1149/2.007304jss
Autor:
Chin-Jyi Wu, Chia-Chiang Chang, I-Chung Deng, Chia-Wei Chi, Sung-Hung Huang, Kow-Ming Chang, Chien-Hung Wu
Publikováno v:
ECS Transactions. 45:231-237
Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100oC, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f07da159538d21f9fcd6fa56c26f156
https://doi.org/10.1149/1.3701543
https://doi.org/10.1149/1.3701543
Autor:
I-Chung Deng, Je-Wei Lin, Chin-Jyi Wu, Chia-Chiang Chang, Kow-Ming Chang, Wei-Han Chiang, Chien-Hung Wu, Sung-Hung Huang
Publikováno v:
ECS Transactions. 45:189-197
We fabricated bottom gate TFTs with IGZO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of thermal annealing on the properties of IGZO TFTs was studied. After post annealing, the IGZO thin films showed a smooth and dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f4e6ec1bc58338c61ed2aba0e00c490
https://doi.org/10.1149/1.3701539
https://doi.org/10.1149/1.3701539