Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Chia Chi Fan"'
Autor:
Rueyhung R. Weng, Hsuan-Hsuan Lu, Chien-Ting Lin, Chia-Chi Fan, Rong-Shan Lin, Tai-Chung Huang, Shu-Yung Lin, Yi-Jhen Huang, Yi-Hsiu Juan, Yi-Chieh Wu, Zheng-Ci Hung, Chi Liu, Xuan-Hui Lin, Wan-Chen Hsieh, Tzu-Yuan Chiu, Jung-Chi Liao, Yen-Ling Chiu, Shih-Yu Chen, Chong-Jen Yu, Hsing-Chen Tsai
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-18 (2021)
Gamma delta (γδ) T cells have potential for use in immunotherapy against tumours. Here, the authors demonstrate that treatment of tumours with DNA methyltransferase inhibitors modulates cytoskeleton arrangements, upregulates adhesion molecules and
Externí odkaz:
https://doaj.org/article/5a791e731bc34d978ebea8a2c82ef6e8
Autor:
Chi Liu, Chia-Chi Fan, Shu-Yung Lin, Xuan-Hui Lin, Rueyhung R Weng, Hsuan-Hsuan Lu, Yi-Chieh Wu, Tai-Chung Huang, Shih-Yu Chen, Tzu-Yuan Chiu, Yi-Hsiu Juan, Rong-Shan Lin, Hsing-Chen Tsai, Jung-Chi Liao, Chong-Jen Yu, Zheng-Ci Hung, Wan-Chen Hsieh, Yi-Jhen Huang, Yen-Ling Chiu, Chien-Ting Lin
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-18 (2021)
Nature Communications
Nature Communications
γδ T cells are a distinct subgroup of T cells that bridge the innate and adaptive immune system and can attack cancer cells in an MHC-unrestricted manner. Trials of adoptive γδ T cell transfer in solid tumors have had limited success. Here, we sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40415132cfcfa1516c60ac51286159fc
https://doaj.org/article/5a791e731bc34d978ebea8a2c82ef6e8
https://doaj.org/article/5a791e731bc34d978ebea8a2c82ef6e8
Autor:
Hsuan Han Chen, Chun-Hu Cheng, Chia Chi Fan, Chien Liang Lin, Jun Ma, Yu Chi Fan, Chien Liu, Tsung Ming Lee, Chun-Yen Chang, Hsiao-Hsuan Hsu, Tun Jen Chang, Zhi Wei Zheng, Wan Hsin Chen, Shih An Wang
Publikováno v:
Vacuum. 166:11-14
In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::438515ef92d0e11ef3fb1b19af7edf8a
https://doi.org/10.1016/j.vacuum.2019.04.045
https://doi.org/10.1016/j.vacuum.2019.04.045
Autor:
Chia-Chi Fan, Chien Liu, Chih-Chieh Hsu, Chun-Hu Cheng, Hsiao-Hsuan Hsu, Shih-An Wang, Hsuan-Han Chen, Chun-Yen Chang
Publikováno v:
IEEE Transactions on Electron Devices. 66:1082-1086
In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of $\text{I}_{ \mathrm{\scriptscriptstyle ON}}$ enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c4de2480d9ae194382b0ab3836b812
https://doi.org/10.1109/ted.2018.2888836
https://doi.org/10.1109/ted.2018.2888836
Publikováno v:
IEEE Transactions on Electron Devices. 66:825-828
For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91808ef1afdfeb628aacf248e954efa8
https://doi.org/10.1109/ted.2018.2881099
https://doi.org/10.1109/ted.2018.2881099
Autor:
Tai-Chung Huang, Hsing-Chen Tsai, Yen-Ling Chiu, Yi-Jhen Huang, Xuan-Hui Lin, Rueyhung Roc Weng, Chien-Ting Lin, Chong-Jen Yu, Yi-Hsiu Juan, Rong-Shan Lin, Hsuan-Hsuan Lu, Yi-Chieh Wu, Zheng-Ci Hung, Shih-Yu Chen, Tzu-Yuan Chiu, Wan-Chen Hsieh, Chi Liu, Shu-Yung Lin, Chia-Chi Fan, Jung-Chi Liao
γδ T cells are a distinct subgroup of T cells that bridge the innate and adaptive immune systems and can attack cancer or virus-infected cells in an MHC-unrestricted manner. Despite its antitumor ability in both autologous and allogeneic settings,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76ca68e8ac528347d85c01a1adf34058
https://doi.org/10.1101/2020.04.30.069955
https://doi.org/10.1101/2020.04.30.069955
Autor:
Hsiao-Hsuan Hsu, Wu-Ching Chou, Chun-Hu Cheng, Chih Chieh Hsu, Chia Chi Fan, Yi Jia Shih, Hsuan Han Chen, Bing Yang Shih, Wan Hsin Chen, Yu Wen Hung, Chun-Yen Chang, Chien Liu, Yu-Chien Chiu, Ming Huei Lin
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:Q242-Q245
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e63422d0b22199ce508235fc36ac49d
https://doi.org/10.1149/2.0061812jss
https://doi.org/10.1149/2.0061812jss
Autor:
Chuan-Hsi Liu, Ming Huei Lin, Chun-Hu Cheng, Hsiao-Hsuan Hsu, Chun-Yen Chang, Chia Chi Fan, K. M. Chen
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P640-P646
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d4dc26b21543ed3c0522f52c8b02609
https://doi.org/10.1149/2.0091811jss
https://doi.org/10.1149/2.0091811jss
Autor:
Chia-Chi Fan, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Yu-Chien Chiu, Yu-Pin Lan, Shiang-Shiou Yen, Chun-Yen Chang
Publikováno v:
IEEE Transactions on Electron Devices. 64:4200-4205
Achieving high latch-up immunity is critical for power-rail electrostatic discharge (ESD) clamp circuits in high-voltage (HV) integrated circuit products. To investigate how shunt resistance affects the transmission line pulsing current–voltage cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436d3eddd83536890dc0b2e66bf7c865
https://doi.org/10.1109/ted.2017.2736511
https://doi.org/10.1109/ted.2017.2736511
Publikováno v:
2019 Symposium on VLSI Technology.
We demonstrated that the 2.5nm-thick HfAIO x N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing $(SS)$ , a negligible hysteresis of 1mV, an ultralow $I_{off}$ of $135\ \text{fA}/\mu \text{m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9f2300da0e10fc412ea56d40225e213
https://doi.org/10.23919/vlsit.2019.8776482
https://doi.org/10.23919/vlsit.2019.8776482