Výsledky vyhledávání - "Chia‐Hsiu Hsu"

Akademický článek

Prediction of topological Dirac semimetal in Ca-based Zintl layered compounds CaM2X2 (M = Zn or Cd; X = N, P, As, Sb, or Bi)

Autor: Liang-Ying Feng, Rovi Angelo B. Villaos, Aniceto B. Maghirang, Zhi-Quan Huang, Chia-Hsiu Hsu, Hsin Lin, Feng-Chuan Chuang

Publikováno v: Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)

Abstract Topological Dirac materials are attracting a lot of attention because they offer exotic physical phenomena. An exhaustive search coupled with first-principles calculations was implemented to investigate 10 Zintl compounds with a chemical for

Externí odkaz: https://doaj.org/article/e0af6f410ec040c391ed95a60d05d678

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Akademický článek

Layer-dependent band engineering of Pd dichalcogenides: a first-principles study

Autor: Liang-Ying Feng, Rovi Angelo B. Villaos, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang

Publikováno v: New Journal of Physics, Vol 22, Iss 5, p 053010 (2020)

Among the families of transition metal dichalcogenides (TMDs), Pd-based TMDs have been one of the less explored materials. In this study, we investigate the electronic properties of PdX _2 (X = S, Se, or Te) bulk and thin films. The analysis of struc

Externí odkaz: https://doaj.org/article/e747915e3a1d43d09cda7c593d68681b

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Theoretical prediction of topological insulators in two-dimensional ternary transition metal chalcogenides (MM'X4, M = Ta, Nb, or V; M'= Ir, Rh, or Co; X = Se or Te)

Autor: Hsin Lin, Chia-Hsiu Hsu, Zhi-Quan Huang, Ali Sufyan, Feng-Chuan Chuang, Shin-Ming Huang, Gennevieve Macam

Publikováno v: Chinese Journal of Physics. 73:95-102

Ternary transition metal chalcogenides (TTMCs) have attracted interest due to the discovery of their Weyl semimetallic property and the recent synthesis of layered TTMCs which are regarded as potential candidates for two-dimensional (2D) topological

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5bb33f346d4fc65ca40086a66e58278b
https://doi.org/10.1016/j.cjph.2021.06.014

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Band Engineering and Van Hove Singularity on HfX2 Thin Films (X = S, Se, or Te)

Autor: Feng-Chuan Chuang, Rovi Angelo B. Villaos, Hsin Lin, Chia-Hsiu Hsu, Liang-Ying Feng, John Symon C. Dizon, Thi My Duyen Huynh, Harvey N. Cruzado, Zhi-Quan Huang, Shin-Ming Huang, Gennevieve Macam

Publikováno v: ACS Applied Electronic Materials. 3:1071-1079

Two-dimensional transition metal dichalcogenides (TMDs) have become well-known due to their versatile and tunable physical properties for potential applications, specifically on low-power and optic...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::676a20827cb853e40fc253978ed88723
https://doi.org/10.1021/acsaelm.0c00907

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Evolution of the Electronic Properties of ZrX2 (X = S, Se, or Te) Thin Films under Varying Thickness

Autor: Aniceto B. Maghirang, Zhi-Quan Huang, Harvey N. Cruzado, Shin-Ming Huang, Feng-Chuan Chuang, Hsin Lin, Chia-Hsiu Hsu, John Symon C. Dizon, Rovi Angelo B. Villaos

Publikováno v: The Journal of Physical Chemistry C. 125:1134-1142

Probing the effects of thin-film thickness on transition metal dichalcogenides offer novel insights into their electronic properties and tunability, which leads to a new avenue of research and appl...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::81cd191f66261c2ab7fe7ad671439672
https://doi.org/10.1021/acs.jpcc.0c10085

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