Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Chi-Lang Nguyen"'
Autor:
Chen Chen Chung, Kartika Chandra Sahoo, Edward Yi Chang, Chi Lang Nguyen, Binh Tinh Tran, Kung Liang Lin
Publikováno v:
Electronic Materials Letters. 10:1063-1067
In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-μm-thick GaN film grown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cacc27d7140c758e56ac73a6c06119df
https://doi.org/10.1007/s13391-014-3164-0
https://doi.org/10.1007/s13391-014-3164-0
Autor:
Shih Hsuan Tang, Binh Tinh Tran, Nguyen Hong Quan, Chi Lang Nguyen, Guang-Li Luo, Edward Yi Chang, Yung Hsuan Su
Publikováno v:
Electronic Materials Letters. 10:759-762
High crystal quality, smooth surface and fully relaxed Ge1− x Si x (0.05 ≤ x ≤ 0.1) buffers are grown on 6°-off (100) Si substrate by UHV-CVD. A low-temperature (LT) Ge seed layer is used to improve the quality of the Ge1− x Si x buffers. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a53cda2d0656c5b527fe7ef85a7c93
https://doi.org/10.1007/s13391-014-4016-7
https://doi.org/10.1007/s13391-014-4016-7
Autor:
Chen Chen Chung, Kung Liang Lin, Hong Quan Nguyen, Man Chi Huang, Tieng Tung Luong, Tran Binh Tinh, Quang Ho Luc, Hai Dang Trinh, Hung Wei Yu, Chi Lang Nguyen, Edward Chang Yi
Publikováno v:
ECS Transactions. 50:461-467
We present the effect of mult iple A lN buffer layers on characterizations of GaN film quality, which includes a thin high-low-h igh-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053cdac9c27303957293767555542fb8
https://doi.org/10.1149/05003.0461ecst
https://doi.org/10.1149/05003.0461ecst
Autor:
Chen Chen Chung, Chi Lang Nguyen, Kartika Chandra Sahoo, Edward Yi Chang, Ching-Ting Lee, Binh Tinh Tran, Hai Dang Trinh, Tien Tung Luong, Kung Liang Lin, Man Chi Huang, Hung Wei Yu
Publikováno v:
Solar Energy Materials and Solar Cells. 102:208-211
Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4278058c8031bd1cf6ecf833e3674aae
https://doi.org/10.1016/j.solmat.2012.03.030
https://doi.org/10.1016/j.solmat.2012.03.030
Autor:
Chi Lang Nguyen, Hung Wei Yu, Ching-Wen Kuan, Shih-Hsuan Tang, Yung-Hsuan Su, Edward Yi Chang
Publikováno v:
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).
The epitaxial growth of high quality Ge thin films on different materials of In 0.51 Ga 0.49 P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In 0.51 Ga 0.49 P and G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7c937b6558177e16b8e61e0823427b4
https://doi.org/10.1109/smelec.2014.6920908
https://doi.org/10.1109/smelec.2014.6920908
Autor:
Chang Fu Dee, Yue-Chin Lin, Yuen Yee Wong, Hai Dang Trinh, S.P. Wang, Chi-Lang Nguyen, Quang Ho Luc, Binh Tinh Tran, Hong Quan Nguyen, Edward Yi Chang
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al 2 O 3 /InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dda44523d8e4bf480d083abb9be7859
https://doi.org/10.1109/smelec.2012.6417251
https://doi.org/10.1109/smelec.2012.6417251
Autor:
Quang Ho Luc, Thanh Hoa Phan Van, Hung Wei Yu, Ching Hsiang Hsu, Binh Tinh Tran, Chi Lang Nguyen, Chang Fu Dee, Hong Quan Nguyen, Chen Chen Chung, Diao Yuan Chiou, Yuen Yee Wong, Edward Yi Chang, Hai Dang Trinh
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
Growth conditions have investigated for growing high quality In 0.3 Ga 0.7 As and In 0.5 Ga 0.5 As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1609fe57c42f230351231a6fb9a9582c
https://doi.org/10.1109/smelec.2012.6417133
https://doi.org/10.1109/smelec.2012.6417133
Autor:
Yu Chen Weng, Edward Yi Chang, Chi Lang Nguyen, Yueh Chin Lin, Hong Quan Nguyen, Ching-Ting Lee, Yu Sheng Chiu, Tai Ming Lin, Hung Wei Yu
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:011216
Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::205dab269de235c684d25896651b0f86
https://doi.org/10.1116/1.4862165
https://doi.org/10.1116/1.4862165
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Akademický článek
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