Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Chi-Kuen Lo"'
Publikováno v:
Journal of Alloys and Compounds. 562:111-115
Two series of Fe 81− x Ni x Ga 19 /Si(1 0 0) and Fe 81− y Ni y Ga 19 /glass films, where x or y = 0–26, were made by the magnetron sputtering method. The film thickness ( t f ) was fixed at 100 nm. We have performed three kinds of experiments o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ee255c171c3f43d430892e4fa4b7dc4
https://doi.org/10.1016/j.jallcom.2013.01.169
https://doi.org/10.1016/j.jallcom.2013.01.169
Autor:
Chi-Kuen Lo, Mei-Feng Lai, Da-Ren Liu, Ying-Jiun Chen, Zung-Hang Wei, Yi-Hsun Chiu, Chia-Jung Hsu, Chun-Neng Liao, Chiun-Peng Lee
Publikováno v:
IEEE Transactions on Magnetics. 46:179-182
Simulation and experiment are performed to investigate the influence of onion states with different-helicity pair vortices on the magnetization reversal process. It is found that for the onion state that has pair vortices with the same helicity, flux
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e8ac58c5ac877b8347dca65b780a5b
https://doi.org/10.1109/tmag.2009.2034388
https://doi.org/10.1109/tmag.2009.2034388
Autor:
Hong-Ren Shiao, Yun-Ruei Lee, Chun-Neng Liao, Zung-Hang Wei, Chiun-Peng Lee, Yi-Hsun Chiu, Yi-Ping Hsieh, Ying-Jiun Chen, Chia-Jung Hsu, Mei-Feng Lai, Da-Ren Liu, Chi-Kuen Lo
Publikováno v:
IEEE Transactions on Magnetics. 46:630-633
An actuator with single-domain magnetic thin films is designed to investigate the actuation in the application of a magnetic field. The single-domain magnetic thin film used in this study has high shape anisotropy, and the single-domain magnetization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7908b4842967b9bf7a1a3efba7bbbd4f
https://doi.org/10.1109/tmag.2009.2034331
https://doi.org/10.1109/tmag.2009.2034331
Publikováno v:
IEEE Transactions on Magnetics. 43:939-942
The resistance bistability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e599cbd64fa5425cfe6329e84d32e8c1
https://doi.org/10.1109/tmag.2006.888525
https://doi.org/10.1109/tmag.2006.888525
Publikováno v:
IEEE Transactions on Magnetics. 41:892-895
In this paper, we demonstrate high-performance giant magnetoresistive spin transistor (GMRST) and magnetotunneling resistive spin transistor (MTRST) which could be used as magnetic pickup head and magnetoresistive random access memory (MRAM). This ki
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fbad9970534d8fb1f6d661dcaae6e3a
https://doi.org/10.1109/tmag.2004.842081
https://doi.org/10.1109/tmag.2004.842081
Autor:
J. H. Huang, Yeong-Der Yao, Yen-Heng Huang, L. C. Hsieh, Chi-Kuen Lo, Der-Ray Huang, Jau Jiu Ju
Publikováno v:
Journal of Magnetism and Magnetic Materials. 282:279-282
A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configurat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d642174cc97832e8ac6c99f1c0f5ab30
https://doi.org/10.1016/j.jmmm.2004.04.065
https://doi.org/10.1016/j.jmmm.2004.04.065
Publikováno v:
Journal of Magnetism and Magnetic Materials. 209:131-134
(Cu/Co) 10 was deposited on SiO 2 /Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO 2 /Si(1 0 0), the MR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec139a6bde5ce06e347b0a7f2db28a16
https://doi.org/10.1016/s0304-8853(99)00666-6
https://doi.org/10.1016/s0304-8853(99)00666-6
Autor:
Wei-Chih Chien, Xiufeng Han, Chi-Kuen Lo, T. Y. Peng, Yeong-Der Yao, Pang Lin, Lan-Chin Hsieh
Publikováno v:
IEEE Transactions on Magnetics. 43:2812-2814
Oscillating voltage (VOs), which depends on the frequency dependence of the magnetoimpedance (MI) effect, was applied to study a magnetic tunneling junction (MTJ) of Ru(5 nm)/Cu(10 nm)/Ru(5 nm)/IrMn(10 nm)/CoFeB(4 nm)/Al2 O3/CoFeB(4 nm)/Ru(5 nm) at f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7febed1d105e05355028f68da13055fa
https://doi.org/10.1109/tmag.2007.893774
https://doi.org/10.1109/tmag.2007.893774
Publikováno v:
IEEE Transactions on Magnetics. 43:894-896
The structural and exchange bias properties of CoFe/IrMn prepared on Si (100) and Si (111) with an Os/Cu buffer layer were investigated. Since the Os (0002) surface mesh has the same atomic arrangement as fcc (111) orientation, and the lattice mismat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bbde9c616c39fcd74a2d365679f2425
https://doi.org/10.1109/tmag.2006.888497
https://doi.org/10.1109/tmag.2006.888497
Publikováno v:
IEEE Transactions on Magnetics. 42:2624-2626
The ac properties of a pseudo spin valve (PSV) consisting of NOL top/Co/Cu/Co/Ni80Fe20/NOLbottom with a top and bottom nano-oxide layer (NOL) were studied as functions of NOL and thickness, d, by magneto impedance spectroscopy. The NOLs were formed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5be68fc7aa0f082f18fcfa93aef301f6
https://doi.org/10.1109/tmag.2006.879730
https://doi.org/10.1109/tmag.2006.879730