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pro vyhledávání: '"Chi-Jun Chang"'
Autor:
Li Liu, Chi-Jun Chang, Rob Finch, Erica A. Douglas, Fan Ren, Chien-Fong Lo, Tsung-Sheng Kang, Shao-Tsu Hung, Xiaotie Wang, Stephen J. Pearton
Publikováno v:
ECS Transactions. 41:129-136
A finite element simulation was used to estimate the temperature rise of laser lift-off AlGaN/GaN high electron mobility transistors (HEMTs) mounted on AlN substrates via silicone elastomer under various conditions of power density on the transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3227dc09f7d435020e20d1d4c08ed2e1
https://doi.org/10.1149/1.3629961
https://doi.org/10.1149/1.3629961
