Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Chi-Jen Teng"'
Autor:
Jheng-Jie Liu, Wen-Jeng Ho, June-Yan Chen, Jian-Nan Lin, Chi-Jen Teng, Chia-Chun Yu, Yen-Chu Li, Ming-Jui Chang
Publikováno v:
Sensors, Vol 19, Iss 15, p 3399 (2019)
This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading, field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa-structure for high speed response. The electric fields in the InAlAs-multiplic
Externí odkaz:
https://doaj.org/article/3552eff3d3b944d59338a2350e4cdf16
Publikováno v:
Sensors, Vol 18, Iss 9, p 2800 (2018)
This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The des
Externí odkaz:
https://doaj.org/article/2eb6163a54e14232a09e1502f2610cee
Publikováno v:
2020 Opto-Electronics and Communications Conference (OECC).
DC and AC performance of InAlAs/InGaAs avalanche photodiodes in term of dark-current, capacitance, multiplication-gain and 3-dB frequency (f 3-dB ) were demonstrated. The f 3-dB of 10-18 GHz was achieved using various dimensions of mesa active area.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dea63e2ae3ca4d84111293bc27ecb1a8
https://doi.org/10.1109/oecc48412.2020.9273666
https://doi.org/10.1109/oecc48412.2020.9273666
Publikováno v:
2020 Opto-Electronics and Communications Conference (OECC).
High-speed mesa-structure avalanche photodiodes with dual-InGaAs absorption-layer and InAlAs multiplication-layer were fabricated and characterized. The 3-dB frequency of 17.7 GHz and gain-bandwidth product of 105 GHz were obtained using a mesa diame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::731ea52d1d6885eb69566a830a04c9e6
https://doi.org/10.1109/oecc48412.2020.9273555
https://doi.org/10.1109/oecc48412.2020.9273555
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 18, Iss 9, p 2800 (2018)
Sensors
Volume 18
Issue 9
Sensors, Vol 18, Iss 9, p 2800 (2018)
Sensors
Volume 18
Issue 9
This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c751106f6800430a4fc46ca0f7e03ff4
https://pubmed.ncbi.nlm.nih.gov/30149627
https://pubmed.ncbi.nlm.nih.gov/30149627