Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chi-Hsiang Ho"'
Autor:
Hong Wang, Xiaobing Yan, Xinlei Jia, Zichang Zhang, Chi-Hsiang Ho, Chao Lu, Yuanyuan Zhang, Tao Yang, Jianhui Zhao, Zhenyu Zhou, Mengliu Zhao, Deliang Ren
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 464-467 (2018)
Graphene oxide quantum dots (GOQDs) are integrated with a charge trapping layer in a nonvolatile charge trapping memory. The device structures of Pd/SiO2/ZHO/SiO2/Si and Pd/SiO2/ZHO/GOQDs/SiO2/Si are fabricated, measured, and compared. The GOQD-embed
Externí odkaz:
https://doaj.org/article/2851be050d0c47979f0640f0e85427f2
Autor:
CHI-HSIANG HO, 賀吉祥
106
In this study, phase equilibrium conditions for carbon dioxide hydrates in the presence of 1,3-Cyclohexanebis(methylamine)、urea and their mixture were experimentally measured. The three-phase (H-Lw-V) equilibrium pressures and temperatures
In this study, phase equilibrium conditions for carbon dioxide hydrates in the presence of 1,3-Cyclohexanebis(methylamine)、urea and their mixture were experimentally measured. The three-phase (H-Lw-V) equilibrium pressures and temperatures
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/yjm4u3
Autor:
Xiaobing Yan, Mengliu Zhao, Deliang Ren, Zhenyu Zhou, Chao Lu, Hong Wang, Zichang Zhang, Chi-Hsiang Ho, Xinlei Jia, Jianhui Zhao, Yuanyuan Zhang, Tao Yang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 464-467 (2018)
Graphene oxide quantum dots (GOQDs) are integrated with a charge trapping layer in a nonvolatile charge trapping memory. The device structures of Pd/SiO2/ZHO/SiO2/Si and Pd/SiO2/ZHO/GOQDs/SiO2/Si are fabricated, measured, and compared. The GOQD-embed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7772cdabfbeb54a7e962b354cf38744
https://doi.org/10.1109/jeds.2018.2820125
https://doi.org/10.1109/jeds.2018.2820125
Autor:
Murray, Kevin D., Chi-Hsiang Ho, Hsia, Jiun-Yi James, Little, Alex G., Ho, Chih-Hsiang (AUTHOR)
Publikováno v:
CHEST. Dec2002, Vol. 122 Issue 6, p2146-2149. 4p.