Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chi-Che Lu"'
Autor:
Yu-Shyan Lin, Chi-Che Lu
Publikováno v:
Micromachines, Vol 14, Iss 6, p 1183 (2023)
This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO2 is used to form the dielectric and passivation layers. The TiO2 film is characterized using X-ray photoemission spectroscopy (XPS)
Externí odkaz:
https://doaj.org/article/338b59f5ed5a4cdea8aef52fe8116680
Autor:
Chi-Che Lu, 呂季哲
105
This study examines whether there will be an impact on the terms of the debt contract when the firm has a political relationship and what are the influences on the aforementioned relationship after understanding the different cultural discre
This study examines whether there will be an impact on the terms of the debt contract when the firm has a political relationship and what are the influences on the aforementioned relationship after understanding the different cultural discre
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/40351602461244424354
Autor:
Chi-Che Lu, 呂奇哲
102
This thesis investigates on the improvement of sputtered TiO2 AlGaN/GaN metal-oxide-semiconductor high electron-MobilityTransistor (MOS-HEMT) by post oxide annealing (POA). Device fabrication stared with “mesa Isolation”, “source and d
This thesis investigates on the improvement of sputtered TiO2 AlGaN/GaN metal-oxide-semiconductor high electron-MobilityTransistor (MOS-HEMT) by post oxide annealing (POA). Device fabrication stared with “mesa Isolation”, “source and d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/r96ttp
Autor:
Yu-Shyan Lin, Chi-Che Lu
Publikováno v:
IEEE Transactions on Electron Devices. 65:783-787
An AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistor (MOS-HEMT) that uses a high-k TiO2 gate insulator is demonstrated. TiO2 films are annealed at 300 °C and 600 °C in N2 or O2 following the deposition of an oxide layer. Exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::355dedad17edd069f80a49bbe3eebed5
https://doi.org/10.1109/ted.2017.2781141
https://doi.org/10.1109/ted.2017.2781141
Autor:
Yu-Shyan Lin, Chi-Che Lu
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs), using TiO 2 as gate dielectric, are proposed. The dielectric constant of the TiO 2 gate-dielectric layer extracted from C-V measurement is about 20.57. This AlGaN/GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f99e4e4e28d3b73547a4f620bd8c0e81
https://doi.org/10.1109/iciprm.2016.7528615
https://doi.org/10.1109/iciprm.2016.7528615
Autor:
Yu-Shyan Lin1, Chi-Che Lu1
Publikováno v:
IEEE Transactions on Electron Devices. Feb2018, Vol. 65 Issue 2, p783-787. 5p.
Autor:
Chi-Che Lu, Yu-Shyan Lin
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:011209
This study presents TiO2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs). The measured direct current, microwave, and power characteristics of the MOS-HEMT are better than for identical geometry HEMT devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f4846f093ae8df1244bbb22b1e13b89
https://doi.org/10.1116/1.4973877
https://doi.org/10.1116/1.4973877
Publikováno v:
physica status solidi c. 14:1600227
AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si substrates with TiO2 gate dielectrics are fabricated. The dc and power characteristics of AlGaN/GaN MOS-HEMTs are compared with that of metal-gate HEMTs fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07269bbe984bf036f03743346c8ea641
https://doi.org/10.1002/pssc.201600227
https://doi.org/10.1002/pssc.201600227
Autor:
Yu-Shyan Lin, Chi-Che Lu
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan/Feb2017, Vol. 35 Issue 1, p1-3, 3p