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pro vyhledávání: '"Chi T. Q. Nguyen"'
Publikováno v:
Materials, Vol 14, Iss 21, p 6448 (2021)
The dielectric properties, tunability and figure-of-merit (FOM) of relaxor Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and FOM are enh
Externí odkaz:
https://doaj.org/article/0448ba5c8d00480ca8fb921e1ccda59a
Autor:
Minh D. Nguyen, Evert P. Houwman, Matthijn Dekkers, Chi T. Q. Nguyen, Hung N. Vu, Guus Rijnders
Publikováno v:
APL Materials, Vol 4, Iss 8, Pp 080701-080701-8 (2016)
Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% un
Externí odkaz:
https://doaj.org/article/51b8a18eb35c4794856e79768c6443db