Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Cheze, Caroline"'
Autor:
Lähnemann, Jonas, Kaganer, Vladimir M., Sabelfeld, Karl K., Kireeva, Anastasya E., Jahn, Uwe, Chèze, Caroline, Calarco, Raffaella, Brandt, Oliver
Publikováno v:
Phys. Rev. Applied 17, 024019 (2022)
We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of
Externí odkaz:
http://arxiv.org/abs/2009.14634
Autor:
Brandt, Oliver, Kaganer, Vladimir M., Lähnemann, Jonas, Flissikowski, Timur, Pfüller, Carsten, Sabelfeld, Karl K., Kireeva, Anastasya E., Chèze, Caroline, Calarco, Raffaella, Grahn, Holger T., Jahn, Uwe
Publikováno v:
Phys. Rev. Applied 17, 024018 (2022)
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are reco
Externí odkaz:
http://arxiv.org/abs/2009.13983
We present a detailed investigation of the mechanisms at play for the incorporation of In and Mg on the GaN(0001) surface during plasma-assisted molecular beam epitaxy (PAMBE). First, we have studied the kinetics of In desorption in the presence of M
Externí odkaz:
http://arxiv.org/abs/2006.14280
Autor:
Jahn, Uwe, Kaganer, Vladimir M., Sabelfeld, Karl K., Kireeva, Anastasya E., Lähnemann, Jonas, Pfüller, Carsten, Flissikowski, Timur, Chèze, Caroline, Biermann, Klaus, Calarco, Raffaella, Brandt, Oliver
Publikováno v:
Phys. Rev. Applied 17, 024017 (2022)
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated
Externí odkaz:
http://arxiv.org/abs/2002.08713
Thin InN and GaN/InN films were grown on oxygen-polar (O) (000-1) and zinc-polar (Zn) (0001) zinc oxide (ZnO) by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the growth rate (GR) and the substrate polarity on the growth mode and t
Externí odkaz:
http://arxiv.org/abs/1805.11495
Autor:
Feix, Felix, Flissikowski, Timur, Chèze, Caroline, Calarco, Raffaella, Grahn, Holger T., Brandt, Oliver
Publikováno v:
Appl. Phys. Lett. 109, 042104 (2016)
We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated wit
Externí odkaz:
http://arxiv.org/abs/1605.00865
Autor:
Cheze, Caroline
Diese Arbeit befasst sich mit der Keimbildung und den Wachstumsmechanismen von GaN-Nanodrähten (NWs), die mittels Molekularstrahlepitaxie (MBE) hergestellt wurden. Die Hauptneuheiten dieser Studie sind der intensive Gebrauch von in-situ Messmethoden
Externí odkaz:
http://edoc.hu-berlin.de/18452/16933
Autor:
Fernández-Garrido, Sergio, Lähnemann, Jonas, Hauswald, Christian, Korytov, Maxim, Albrecht, Martin, Chèze, Caroline, Skierbiszewski, Czesław, Brandt, Oliver
Publikováno v:
Phys. Rev. Applied 6, 034017 (2016)
We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar co
Externí odkaz:
http://arxiv.org/abs/1510.06512
Autor:
Brandt, Oliver, Fernández-Garrido, Sergio, Zettler, Johannes K., Luna, Esperanza, Jahn, Uwe, Chèze, Caroline, Kaganer, Vladimir M.
Publikováno v:
Cryst. Growth Des. 14, 2246 (2014)
Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus formed GaN nanowire ensembles, individual nanowires coalesce with others i
Externí odkaz:
http://arxiv.org/abs/1402.5252
Autor:
Turski, Henryk, Krzyżewski, Filip, Feduniewicz-Żmuda, Anna, Wolny, Pawel, Siekacz, Marcin, Muziol, Grzegorz, Cheze, Caroline, Nowakowski-Szukudlarek, Krzesimir, Xing, Huili (Grace), Jena, Debdeep, Załuska-Kotur, Magdalena, Skierbiszewski, Czesław
Publikováno v:
In Applied Surface Science 1 August 2019 484:771-780