Výsledky vyhledávání - "Cheung, Clincy"

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Demonstration of a monocrystalline GaAs-$\beta$-Ga$_2$O$_3$ p-n heterojunction

Autor: Zhou, Jie, Sheikhi, Moheb, Dheenan, Ashok, Abbasi, Haris, Gong, Jiarui, Liu, Yang, Adamo, Carolina, Marshall, Patrick, Wriedt, Nathan, Cheung, Clincy, Qiu, Shuoyang, Ng, Tien Khee, Gan, Qiaoqiang, Gambin, Vincent, Ooi, Boon S., Rajan, Siddharth, Ma, Zhenqiang

In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-typ

Externí odkaz: http://arxiv.org/abs/2310.03886

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Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Autor: Zhou, Jie, Dheenan, Ashok, Gong, Jiarui, Adamo, Carolina, Marshall, Patrick, Sheikhi, Moheb, Tsai, Tsung-Han, Wriedt, Nathan, Cheung, Clincy, Qiu, Shuoyang, Ng, Tien Khee, Gan, Qiaoqiang, Vincent, Gambin, Ooi, Boon S., Rajan, Siddharth, Ma, Zhenqiang

Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate mo

Externí odkaz: http://arxiv.org/abs/2308.06575

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Monocrystalline Si/$\beta$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has hindered th

Externí odkaz: http://arxiv.org/abs/2305.19138

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