Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Cheuk-Wah Man"'
Autor:
Cheuk-Wah Man, Paul van Adrichem, Yohei Ikebe, Claire van Lare, Frank Timmermans, Jo Finders, Takahiro Onoue, Olena Romanets, Takeshi Aizawa
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
The low-n attenuated phase-shift mask can strongly improve extreme ultraviolet imaging performance; it enhances contrast by mask 3D mitigation and a phase-shift effect while simultaneously reducing the required exposure dose. The latter happens becau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78dda98d6c43540eca050ecb88574a21
https://doi.org/10.1117/1.jmm.20.2.021006
https://doi.org/10.1117/1.jmm.20.2.021006
Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond
Autor:
Ramasubramanian Kottumakulal Jaganatharaja, Jun Kotani, Dorothe Oorschot, Cheuk-Wah Man, Guido Schiffelers, Joep van Dijk, Yutaka Kodera, Haiko Rolff, Robert de Kruif, Ad Lammers, Eelco van Setten, Hiroaki Morimoto, Shinpei Kondo, Brid Connolly, Albrecht Ullrich, Tomohiro Imoto, Norihito Fukugami, Yo Sakata, Natalia Davydova
Publikováno v:
SPIE Proceedings.
Photomask is at the heart of a lithographic scanner’s optical path. It cannot be left non-optimized from the imaging point of view. In this work we provide new insights on two critical aspects of EUV mask architecture: optimization of absorber for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26ca2921d588b1098109f0651d3303c
https://doi.org/10.1117/12.2066299
https://doi.org/10.1117/12.2066299
Autor:
Petra Spies, Markus Waiblinger, Cheuk-Wah Man, Nils Wiese, Natalia Davydova, Kees Feenstra, Eelco van Setten, Robert de Kruif, Mircea Dusa, Dorothe Oorschot, Christian Wagner
Publikováno v:
SPIE Proceedings.
EUVL requires the use of reflective optics including a reflective mask. The reticle blank contains a reflecting multilayer, tuned for 13.5nm, and an absorber which defines the dark areas. The EUV mask is a complex optical element with many more param
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f16f89f038b755db4d2a9a17a8641a6d
https://doi.org/10.1117/12.864247
https://doi.org/10.1117/12.864247
Autor:
Rogelio Murillo, Eelco van Setten, Cheuk Wah Man, Koen van Ingen Schenau, Christian Wagner, Kees Feenstra, Sjoerd Lok
Publikováno v:
SPIE Proceedings.
EUVL requires the use of reflective optics including a reflective mask. The reticle blank contains a reflecting multilayer, tuned for 13.5nm actinic light, and an absorber which defines the dark areas. The oblique incidence of light in combination wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8be4d2191888ad8628c703370b6d156
https://doi.org/10.1117/12.864251
https://doi.org/10.1117/12.864251
Autor:
Paul van Adrichem, Jo Finders, Frank Timmermans, Cheuk-Wah Man, Takahiro Onoue, Olena Romanets, Claire van Lare, Takeshi Aizawa, Yohei Ikebe
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII
Simulations on attenuated phase-shift masks (att PSM) for EUV have shown that these novel mask absorbers can strongly boost optical contrast. The optimum EUV imaging mask does not only need to balance the diffraction order amplitudes (as in DUV imagi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f697f1445eac8aaabcff5270bbbd1c5
