Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Chetan Prasad"'
Autor:
Bijaya B. K, Chetan Prasad Lingden, Tamlal Pokhrel, Manisha Paudel, Kiran Sajid, Dr. Achyut Adhikari, Bahareh Shirinfar, Dr. Nisar Ahmed
Publikováno v:
ChemElectroChem, Vol 10, Iss 23, Pp n/a-n/a (2023)
Abstract Cathodic reductive electrolysis in organic transformations is used to generate radical anions. These electrochemical reduction reactions are very useful in various carbonyl groups transformation (such as aldehydes, ketones, esters, and amide
Externí odkaz:
https://doaj.org/article/66ecc9c2191e4df8b0e77ecdd9c00fe0
Autor:
K, Bijaya B., Lingden, Chetan Prasad, Pokhrel, Tamlal, Paudel, Manisha, Sajid, Kiran, Adhikari, Achyut, Shirinfar, Bahareh, Ahmed, Nisar
Publikováno v:
ChemElectroChem; Dec2023, Vol. 10 Issue 23, p1-39, 39p
Autor:
Chetan Prasad
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Chetan Prasad
Publikováno v:
IEEE Transactions on Electron Devices. 66:4546-4555
The march toward dimensional scaling and higher performance has led the semiconductor industry to consider nonplanar topologies and different material systems. These choices have led to an increase in the local power dissipation and, correspondingly,
Autor:
SundaraRaj, Chetan Prasad, Math, Mahantesh M., Girisha, V. A., Bharatish, A., Gogi, Vivekanand S., Subramanya, S. Gowreesh, Annigeri, Anandkumar R., Dileep, B. P.
Publikováno v:
Journal of the Institution of Engineers (India): Series D; 20230101, Issue: Preprints p1-15, 15p
Autor:
Mahjabin Maksud, Hannes Greve, Daniel Pantuso, Chetan Prasad, K. W. Park, Benjamin J. Orr, Peng Bai, I-chen Ho, Steven R. Novak, Zhizheng Zhang, D. Ingerly, Michael P. O'Day, Cheyun Lin, Enamul Kabir, Emre Armagan, Sunny Chugh, Patrick N. Stover, Lance C. Hibbeler, A. Schmitz, Hsinwei Wu
Publikováno v:
IRPS
This work presents silicon reliability characterization of Intel’s Foveros three-dimensional (3D) logic-on-logic stacking technology implemented on the 22FFL process node. Simulations and data demonstrate mechanical strain safe zones around Through
Publikováno v:
Microelectronics Reliability. 82:42-50
BTI has long been a concern for transistor reliability, and as such garnered significant attention for process optimization and qualification. Typically, the details of a given technology are reported in the literature at the time of qualification. H
Publikováno v:
2018 3rd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT).
In recent times, Wireless sensor networks are becoming an efficient way to keep a watch on various vital parameters in nature. They can become governing network layers in applications which are used to monitor pollution. The application proposed thus
Autor:
Kunderu, Chetan Prasad, Hassan, Renma
Knowledge and management of that knowledge have been a corner-stone for many enterprises. Creation, dissemination and preservation of knowledge is a difficult task for many organizations. This study identified knowledge transfer mechanism in a start-
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-358215
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
On advanced technology nodes, increases in power density, non-planar architectures and different material systems can exacerbate local self-heating due to active power dissipation, which can affect device performance and reliability in various ways.