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pro vyhledávání: '"Cheryl Periera"'
Autor:
Genevieve Beique, Lei Sun, Jeffrey S. Smith, Wenhui Wang, Richard A. Farrell, C. Labelle, Peter Biolsi, Kal Subhadeep, Cheryl Periera, Elliott Franke, Erik Verdujn, Ryoung-han Kim, Erik R. Hosler, Nihar Mohanty, Akiteru Ko, Anton J. deVilliers
Publikováno v:
SPIE Proceedings.
Critical back end of line (BEOL) Mx patterning at 7nm technology node and beyond requires sub-36nm pitch line/space pattern in order to meet the scaling requirements. This small pitch can be achieved by either extreme ultraviolet (EUV) lithography or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e07c4b879800bf2f04725b9bd26243a8
https://doi.org/10.1117/12.2219259
https://doi.org/10.1117/12.2219259
