Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Cheryl J. Marshall"'
Autor:
En Xia Zhang, Scott L. Jordan, N. J. Gaspard, Cheryl J. Marshall, Rick Wong, N. A. Dodds, S.-J. Wen, Dale McMorrow, Jonathan A. Pellish, Robert A. Reed, James Fred Salzman, Jeffrey H. Warner, Bharat L. Bhuva, Nicolas J.-H. Roche, William G. Bennett, Ronald D. Schrimpf, Nicholas C. Hooten
Publikováno v:
IEEE Transactions on Nuclear Science. 59:2642-2650
Heavy ion, neutron, and laser experimental data are used to evaluate the effectiveness of various single event latchup (SEL) hardening strategies, including silicon-on-insulator (SOI), triple well, and guard rings. Although SOI technology is widely r
Autor:
Cheryl J. Marshall, Ronald D. Schrimpf, Paul W. Marshall, Brian D. Sierawski, Robert A. Weller, John E. Hubbs, Marcus H. Mendenhall, Robert A. Reed, C.L. Howe
Publikováno v:
IEEE Transactions on Nuclear Science. 56:2167-2170
The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a fo
Autor:
Ronald D. Schrimpf, Akil K. Sutton, R. Krithivasan, Brian D. Sierawski, Marcus H. Mendenhall, Robert A. Reed, Kevin M. Warren, Guofu Niu, Cheryl J. Marshall, M.A. Carts, Paul W. Marshall, Robert A. Weller, Jonathan A. Pellish, John D. Cressler
Publikováno v:
IEEE Transactions on Nuclear Science. 54:2322-2329
This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits
Autor:
J.P. Garcia, A.A. Anderson, Mark E. Gramer, Paul W. Marshall, Cheryl J. Marshall, John E. Hubbs, D. Maestas, Gary A. Dole
Publikováno v:
IEEE Transactions on Nuclear Science. 54:2435-2443
This paper presents a study of the performance degradation in a proton environment of long wavelength infrared (LWIR) HgCdTe detectors. The energy dependence of the Non-Ionizing Energy Loss (NIEL) in HgCdTe provides a framework for estimating the res
Autor:
Brian D. Sierawski, Robert A. Reed, Ronald D. Schrimpf, Cheryl J. Marshall, Paul W. Marshall, Marcus H. Mendenhall, John E. Hubbs, Robert A. Weller, C.L. Howe
Publikováno v:
IEEE Transactions on Nuclear Science. 54:2444-2449
Proton-induced energy deposition in a silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, including events resulting from multiple particles incident on a single pixel, to
Autor:
John D. Cressler, Marco Bellini, Cheryl J. Marshall, Laleh Najafizadeh, Bongim Jun, Akil K. Sutton, R.M. Diestelhorst, Paul W. Marshall
Publikováno v:
IEEE Transactions on Nuclear Science. 54:2238-2244
A comprehensive investigation of the performance dependencies of irradiated SiGe precision voltage reference circuits on (1) total ionizing dose (TID), (2) circuit topology, and (3) radiation source is presented. Two different bandgap voltage referen
Autor:
A.P.G. Prakash, Daniel M. Fleetwood, A. Phan, Jonathan A. Pellish, Robert A. Reed, Marco Bellini, Akil K. Sutton, Cheryl J. Marshall, Ronald D. Schrimpf, Bongim Jun, John D. Cressler, Paul W. Marshall, M.A. Carts, Raymond L. Ladbury, Enhai Zhao, R.M. Diestelhorst
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3166-3174
We present an investigation of the observed variations in the total dose tolerance of the emitter-base spacer and shallow trench isolation oxides in a commercial 200 GHz SiGe HBT technology. Proton, gamma, and X-ray irradiations at varying dose rates
Autor:
Akil K. Sutton, R.M. Diestelhorst, J.M. Andrews, Cheryl J. Marshall, John D. Cressler, G. Espinel, Bongim Jun, A.P.G. Prakash, Paul W. Marshall
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3175-3181
We compare, for the first time, the effects of 63 MeV protons on 1st generation and 3rd generation SiGe HBTs irradiated at both liquid nitrogen temperature (77 K) and at room temperature (300 K). The 1st generation SiGe HBTs irradiated at 77 K show l
Autor:
Paul W. Marshall, Marco Bellini, A.P.G. Prakash, Laleh Najafizadeh, John D. Cressler, Cheryl J. Marshall, G. Espinel
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3210-3216
A comprehensive investigation of the effects of proton irradiation on the performance of SiGe BiCMOS precision voltage references intended for extreme environment operational conditions is presented. The voltage reference circuits were designed in tw
Autor:
S. Currie, Christina Seidleck, Raymond L. Ladbury, M.A. Carts, Akil K. Sutton, R. Krithivasan, B. Randall, Paul W. Marshall, Barry K. Gilbert, Cheryl J. Marshall, John D. Cressler, Dale McMorrow, Robert A. Reed, K. Fritz, Guofu Niu
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3277-3284
We present, for the first time, an analysis of the error signatures captured during pulsed laser microprobe testing of high-speed digital SiGe logic circuits. 127-bit shift registers, configured using various circuit level latch hardening schemes and