Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Cheryl Alix"'
Autor:
Yusuke Muraki, Yusuke Oniki, Pallavi P. Gowda, Efrain Altamirano-Sánchez, Hans Mertens, Naoto Horiguchi, Frank Holsteyns, Subhadeep Kal, Cheryl Alix, Kaushik Kumar, Aelan Mosden, Trace Hurd, Nobuyuki Takahashi
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cddf542bde2bd4b7a45bd858701f6c81
https://doi.org/10.1117/12.2613723
https://doi.org/10.1117/12.2613723
Autor:
Madhulika Korde, G. Andrew Antonelli, Alain C. Diebold, Aelan Mosden, Nick Keller, Subhadeep Kal, Cheryl Alix
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Here, we report the measurement of the dielectric spacer etch process for nanowire and nanosheet FET processes. A previously described Nanowire Test Structure (NWTS) was used for this study.[1, 2, 3] This structure has alternating Si/Si1-xGex/…/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd2e20545cee1b409799acf5cd6f52ea
https://doi.org/10.1117/12.2584751
https://doi.org/10.1117/12.2584751
Autor:
Subhadeep Kal, Karine Kenis, Trace Hurd, Yusuke Muraki, Peter Biolsi, Cheryl Alix, Aelan Mosden, Naoto Horiguchi, Yusuke Oniki, Frank Holsteyns, Kaushik A. Kumar, Efrain Altamirano-Sánchez, Chanemougame Daniel
Publikováno v:
Advanced Etch Technology for Nanopatterning IX.
R&D on transistor fabrication and scaling for current and future technology nodes involves various 3D-device architectures like the established finFET (fin “Field Effect Transistor”), and newer architectures like GAA (Gate All Around) which may i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8995183416d62cb4c70a29a608020eab
https://doi.org/10.1117/12.2550539
https://doi.org/10.1117/12.2550539
Autor:
Nick Keller, Alain C. Diebold, Subhadeep Kal, Daniel F. Sunday, R. Joseph Kline, Aelan Mosden, Madhulika Korde, Cheryl Alix
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
The three-dimensional architectures for field effect transistors (FETs) with vertical stacking of Gate-all-Around Nanowires provide a pathway to increased device density and superior electrical performance. However, the transition from research into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a892019fc4fafd6e34ad88755babf6
https://doi.org/10.1117/12.2553371
https://doi.org/10.1117/12.2553371
Autor:
Andrew M. Greene, Aelan Mosden, Peter Biolsi, Cheryl Alix, Jeffrey Smith, Veeraraghavan S. Basker, Subhadeep Kal, Daniel Schmidt, Michael P. Belyansky, Koji Watanabe, Frougier Julien, Shanti Pancharatnam, Nicolas Loubet, Jingyun Zhang, Flaugh Matthew, Dechao Guo, Kai Zhao, Huimei Zhou, Maruf Bhuiyan, Balasubramanian S. Haran, Chanemougame Daniel, Miaomiao Wang, Curtis Durfee, Huiming Bu, Ivo Otto, Mary Breton
Publikováno v:
ECS Meeting Abstracts. :943-943
Horizontally stacked nanosheet gate-all-around devices enable area scaling of transistor technology, while providing improved electrostatic control over FinFETs for a wide range of channel widths within a single chip for simultaneous low power applic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fba30178f3e31c0a43256dbe4a6242d
https://doi.org/10.1149/ma2021-0230943mtgabs
https://doi.org/10.1149/ma2021-0230943mtgabs
Autor:
Alain C. Diebold, Subhadeep Kal, Madhulika Korde, Cheryl Alix, G. Andrew Antonelli, Nick Keller, Aelan Mosden
Publikováno v:
Journal of Vacuum Science & Technology B. 38:024007
Nondestructive measurement of three-dimensional subsurface features remains one of the most difficult and unmet challenges faced during the fabrication of three-dimensional transistor architectures, especially nanosheet and nanowire based field effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32bf80311b2a1dd181ee0fe4e42c2ef8
https://doi.org/10.1116/1.5136291
https://doi.org/10.1116/1.5136291