Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Cherq Chua"'
Publikováno v:
Virtual and Physical Prototyping, Vol 18, Iss 1 (2023)
Lattice structures are widely used in the industry for aerospace, automotive and biomedical applications as they are strong yet lightweight. Due to the complex geometry, lattice structures are mostly fabricated with additive manufacturing (AM). Despi
Externí odkaz:
https://doaj.org/article/56fa2daaea13455bad5a08fe425564b7
Publikováno v:
IEEE Transactions on Electron Devices. 70:1509-1519
Publikováno v:
Materials Today: Proceedings. 70:616-621
Publikováno v:
IEEE Transactions on Plasma Science. :1-15
Publikováno v:
Virtual and Physical Prototyping. 18
Publikováno v:
Web of Science
Two-dimensional (2D) layered dielectrics offers a compelling route towards the design of next-generation ultimately compact nanoelectronics. Motivated by recent high-throughput computational prediction of LaO$X$ ($X$ = Br, Cl) as an exceptional 2D di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d2e05c535e96c17260b2a453717d7e3
Publikováno v:
Physical Review Applied. 16
For field emission (FE), it is widely expected that its emitting current density $J$ will become space-charge-limited current (SCLC) due the built-up of charge in-transit within a gap spacing $D$ biased at sufficiently large voltage $V$. In this pape
Publikováno v:
2021 IEEE International Conference on Plasma Science (ICOPS).
The transition from source limited electron emission like field emission at low voltage to bulk transport limited by space charge effects at high voltage is widely accepted. In this paper, we report that this understanding is no longer valid if the f
Publikováno v:
Applied Physics Letters. 121:192109
For a biased trap-filled insulator, the current transport is governed by the physics of charge injection from the metallic electrode and also the trap-limited space-charge conduction in the insulator. With a Schottky barrier at the interface of the m
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
With the emergence of non-FN based field emitters, the establish transition from source-limited field emission (FE) at low voltage to space-charge-limited current (SCLC) at high voltage is no longer valid. In this paper, we predict a critical pre-fac