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Autor:
null Solodovnik M. S., null Kirichenko D. V., null Eremenko M. M., null Balakirev S. V., null Chernenko N. E., null Shandyba N. A.
Publikováno v:
Semiconductors. 56:541
This paper presents the results of experimental studies of the effect of the Ga ion dose during ion-beam treatment of the Si(111) surface using the focused ion beam technique on the Ga+ nanowires epitaxial growth processes. A significant difference i
Autor:
null Solodovnik M. S., null Ageev O. A., null Chernenko N. E., null Shandyba N. A., null Kirichenko D. V., null Lakhina E. A., null Eremenko M. M., null Balakirev S. V.
Publikováno v:
Physics of the Solid State. 64:595
In this paper, we present a study of the effect of the silicon substrate modification by focused ion beams on subsequent growth of GaAs layers by molecular beam epitaxy. We demonstrate that when samples exposed to the ion irradiation at various accel
Autor:
null Solodovnik M. S., null Eremenko M. M., null Shandyba N. A., null Chernenko N. E., null Kirichenko D. V., null Balakirev S. V.
Publikováno v:
Physics of the Solid State. 64:949
In this paper, we present the results of studying the influence of arsenic pressure in the range of ultra-low values (10-7-10-6 Pa) on the processes of modification of In/GaAs(001) droplets with various initial sizes obtained by droplet epitaxy. We e
This work was supported by the Russian Science Foundation Grant No. 15-19-10006. The results were obtained using the equipment of the Research and Education Center and Center for Collective Use "Nanotechnologies" of Southern Federal University.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______917::099e1b37e0617e4aa0dc2f021596f2c7
https://hdl.handle.net/10995/79028
https://hdl.handle.net/10995/79028
This work was supported by Grant of the President of the Russian Federation No. MK-2721.2018.8. and by RFBR according to the research project № 18-37-00299
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______917::7a9320aa735853e23c5fb13602060ce8
https://hdl.handle.net/10995/80736
https://hdl.handle.net/10995/80736
Publikováno v:
Nanotechnologies in Russia; Nov2017, Vol. 12 Issue 11/12, p650-657, 8p
Publikováno v:
IOP Conference Series: Materials Science and Engineering; November 2018, Vol. 443 Issue: 1 p012036-012036, 1p