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Publikováno v:
Dorofeev, A.A. ; Matveev, Yu.A. ; Chernavskii, A.A. (2000) Researches of two and three-output structures with effect of resonant tunneling. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
The present paper is devoted to the development of production process of transistor structures with effect of resonant tunneling (RTT), researching static and dynamic characteristics and working frequency band of the samples and definition of possibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::227693bd493e147f589e76c6004d226a
