Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Cherkaoui Karim"'
Autor:
Molina-Aldareguia Jon, Monaghan Scott, Hurley Paul, Cherkaoui Karim, Benedicto Marcos, Galiana Beatriz, Vazquez Luis, Tejedor Paloma
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 400 (2011)
Abstract Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching usin
Externí odkaz:
https://doaj.org/article/45478afec9db4d73aae2bb9e7bc787ba
Autor:
Lin, Jun, Monaghan, Scott, Cherkaoui, Karim, Povey, Ian M., Sheehan, Brendan, Hurley, Paul K.
Publikováno v:
In Microelectronic Engineering 25 June 2017 178:204-208
Autor:
Lin, Jun, Monaghan, Scott, Cherkaoui, Karim, Povey, Ian, O’Connor, Éamon, Sheehan, Brendan, Hurley, Paul
Publikováno v:
In Microelectronic Engineering 1 November 2015 147:273-276
Akademický článek
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Akademický článek
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Autor:
Caruso, Enrico, Lin, Jun, Monaghan, Scott, Cherkaoui, Karim, Gity, Farzan, Palestri, Pierpaolo, Esseni, David, Selmi, Luca, Hurley, Paul K.
This work demonstrates that when inelastic band-to-trap tunneling is considered, border traps aligned with the semiconductor bandgap play a significant role in the C-V/G-V dispersion of a MOS structure. In addition, for the case of quantization, a no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1535::90533ff9064cbdc30a4bdfe18a34fef3
https://hdl.handle.net/10468/7854
https://hdl.handle.net/10468/7854
Autor:
Gity, Farzan, Ansari, Lida, Monaghan, Scott, Mirabelli, Gioele, Torchia, Pasqualino, Hydes, Alan, Schmidt, Michael, Sheehan, Brendan, McEvoy, Niall, Hallam, Toby, Cherkaoui, Karim, Nagle, Roger, Duffy, Ray, Duesberg, Georg S., Hurley, Paul K.
Controllable doping of two-dimensional (2D) materials is one of the main research challenges associated with the practical realization of 2D semiconductors in hetero-and homo-junctions. We report that the selected-area treatment of MoS2 films with ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1535::d789d9a6212fda1bcec7557efac70c8f
https://hdl.handle.net/10468/13383
https://hdl.handle.net/10468/13383
Autor:
Hurley, Paul K., Monaghan, Scott, O'Connor, Eamon, Caruso, Enrico, Cherkaoui, Karim, Floyd, Liam, Povey, Ian M., Alan, David, Millar, John, Peralagu, Uthayasankaran, Thayne, Iain G.
Impedance spectroscopy of the metal-oxide semiconductor (MOS) system has played a central role in the development of silicon-based complementary MOS (CMOS) technology over the past 50 years [1, 2]. With current research interest into alternative semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3e8f133204e414e1aecedc0731d0e40
https://hdl.handle.net/10468/14130
https://hdl.handle.net/10468/14130
Autor:
Torchia, Pasqualino, Pampili, Pietro, O'Connell, John, O'Brien, Joe, White, Mary, Schmidt, Michael, Sheehan, Brendan, Waldron, Finbarr, Holmes, Justin D., Monaghan, Scott, Duffy, Ray, Trajkovic, T., Kilchytska, V., Gammon, P. M., Cherkaoui, Karim, Hurley, Paul K., Gity, Farzan
In this study, a surface activated bonding method using remote plasma is applied to realize the direct wafer bonding of Si and SiC. A comparison of different surface treatments is reported. Hydrophilic and hydrophobic wafers have been exposed to in-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1535::6fa9938725c6fb46d5556177e342e6f2
https://hdl.handle.net/10468/7113
https://hdl.handle.net/10468/7113
Autor:
Lin, Jun, Gomeniuk, Yuri Y., Monaghan, Scott, Povey, Ian M., Cherkaoui, Karim, O'Connor, Éamon, Power, Máire, Hurley, Paul K.
Publikováno v:
Journal of Applied Physics; Oct2013, Vol. 114 Issue 14, p144105, 7p, 1 Black and White Photograph, 1 Diagram, 2 Charts, 5 Graphs