Zobrazeno 1 - 10
of 142
pro vyhledávání: '"Cherepanov, Vasily"'
Autor:
Leis, Arthur, Schleenvoigt, Michael, Moors, Kristof, Soltner, Helmut, Cherepanov, Vasily, Schüffelgen, Peter, Mussler, Gregor, Grützmacher, Detlev, Voigtländer, Bert, Lüpke, Felix, Tautz, F. Stefan
Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM),
Externí odkaz:
http://arxiv.org/abs/2204.03753
Autor:
Leis, Arthur, Schleenvoigt, Michael, Cherepanov, Vasily, Lüpke, Felix, Schüffelgen, Peter, Mussler, Gregor, Grützmacher, Detlev, Voigtländer, Bert, Tautz, F. Stefan
Publikováno v:
Adv. Quantum Technol. 4, 2100083 (2021)
Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological
Externí odkaz:
http://arxiv.org/abs/2106.06217
Autor:
Esat, Taner, Borgens, Peter, Yang, Xiaosheng, Coenen, Peter, Cherepanov, Vasily, Raccanelli, Andrea, Tautz, F. Stefan, Temirov, Ruslan
Publikováno v:
Rev. Sci. Instrum. 92, 063701 (2021)
We present the design and performance of an ultra-high vacuum (UHV) scanning tunneling microscope (STM) that uses adiabatic demagnetization of electron magnetic moments for controlling its operating temperature in the range between 30 mK and 1 K with
Externí odkaz:
http://arxiv.org/abs/2103.11945
Publikováno v:
Phys. Rev. B 101, 245413 (2020)
Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the interior of the
Externí odkaz:
http://arxiv.org/abs/1908.09412
Autor:
Lüpke, Felix, Doležal, Jiří, Cherepanov, Vasily, Ošt'ádal, Ivan, Tautz, F. Stefan, Voigtländer, Bert
Publikováno v:
Surface Science 681, 130 (2019)
The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy electron diffrac
Externí odkaz:
http://arxiv.org/abs/1810.05553
Autor:
Voigtländer, Bert, Coenen, Peter, Cherepanov, Vasily, Borgens, Peter, Duden, Thomas, Tautz, F. Stefan
The construction and the vibrational performance of a low vibration laboratory for microscopy applications comprising a 100 ton floating foundation supported by passive pneumatic isolators (air springs), which rest themselves on a 200 ton solid base
Externí odkaz:
http://arxiv.org/abs/1802.05621
Autor:
Lüpke, Felix, Eschbach, Markus, Heider, Tristan, Lanius, Martin, Schüffelgen, Peter, Rosenbach, Daniel, Driesch, Nils von den, Cherepanov, Vasily, Mussler, Gregor, Plucinski, Lukasz, Grützmacher, Detlev, Schneider, Claus M., Voigtländer, Bert
Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the deta
Externí odkaz:
http://arxiv.org/abs/1704.06580
Publikováno v:
Phys. Rev. B 95, 075310 (2017)
An analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point measurements on the microscale. As the N-layer model comprises a surf
Externí odkaz:
http://arxiv.org/abs/1610.02239
Autor:
Just, Sven, Blab, Marcus, Korte, Stefan, Cherepanov, Vasily, Soltner, Helmut, Voigtländer, Bert
Publikováno v:
Phys. Rev. Lett. 115, 066801 (2015)
Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configu
Externí odkaz:
http://arxiv.org/abs/1505.01288