Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Cher-Shiung Tsai"'
Publikováno v:
International Journal of Computer Theory and Engineering. :562-566
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08da5bd07342120e4f38a4f275af6caa
https://doi.org/10.7763/ijcte.2013.v5.750
https://doi.org/10.7763/ijcte.2013.v5.750
Publikováno v:
Circuits and Systems. :307-310
We demonstrate the design of a novel voltage-controlled oscillator (VCO), which is based on a metal-oxide-semiconductor field-effect transistor (MOS) differential amplifier with active load. This VCO achieves low phase noise and wide tuning range. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::321f551a12e86d84384692adddc077a3
https://doi.org/10.4236/cs.2012.34043
https://doi.org/10.4236/cs.2012.34043
Publikováno v:
Analog Integrated Circuits and Signal Processing. 73:409-414
We first propose an inverter circuit design using the negative differential resistance (NDR) circuit composed of the standard Si-based n-channel metal-oxide-semiconductor field-effect-transistor (NMOS) and SiGe-based heterojunction bipolar transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c14358a67041ac95d3ce6540db032c5
https://doi.org/10.1007/s10470-011-9709-3
https://doi.org/10.1007/s10470-011-9709-3
Publikováno v:
Analog Integrated Circuits and Signal Processing. 70:141-145
The behavior of a novel frequency divider circuit using negative differential resistance (NDR) circuit is studied. This NDR circuit is made of resistors (R) and bipolar-junction-transistor (BJT) devices. It can show the NDR characteristic in its comb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ab06e4b89f3e53eef1550fb7194e410
https://doi.org/10.1007/s10470-011-9653-2
https://doi.org/10.1007/s10470-011-9653-2
Publikováno v:
Analog Integrated Circuits and Signal Processing. 68:379-385
The monostable---bistable transition logic element (MOBILE) is a promising application for negative differential resistance (NDR) circuit. Previously reported MOBILE is constructed by resonant tunneling diode (RTD) that is implemented by the molecula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e4768599f2e168dea829a99ee2f3b31
https://doi.org/10.1007/s10470-011-9652-3
https://doi.org/10.1007/s10470-011-9652-3
Publikováno v:
Microelectronics Journal. 42:477-482
We present a monostable-bistable transition logic element (MOBILE) based on the negative-differential-resistance (NDR) circuit. In particular, this circuit can be completely implemented using the standard BiCMOS process. A traditional MOBILE using tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57dba874777e486eedc382997d66dc41
https://doi.org/10.1016/j.mejo.2010.10.016
https://doi.org/10.1016/j.mejo.2010.10.016
Publikováno v:
Solid-State Electronics. 54:1637-1640
This paper demonstrates a concise and novel voltage-controlled multiple-valued logic (MVL) design using the standard BiCMOS technique. This MVL circuit is constructed by a voltage-controlled negative differential resistance (NDR) circuit, which is in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2744961352ef89f65b4b1abe496feda4
https://doi.org/10.1016/j.sse.2010.08.007
https://doi.org/10.1016/j.sse.2010.08.007
Publikováno v:
Analog Integrated Circuits and Signal Processing. 62:63-68
We investigate four novel negative-differential-resistance (NDR) circuits using the combination of the standard Si-based n-channel metal-oxide-semiconductor field-effect-transistor (NMOS) and SiGe-based heterojunction bipolar transistor (HBT). By sui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecdbc700ea47b105a3689cded9baf46a
https://doi.org/10.1007/s10470-009-9327-5
https://doi.org/10.1007/s10470-009-9327-5
Publikováno v:
IEICE Transactions on Electronics. :635-638
The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee33e4a40fc176454cde41566e23fa9
https://doi.org/10.1587/transele.e92.c.635
https://doi.org/10.1587/transele.e92.c.635
Publikováno v:
Analog Integrated Circuits and Signal Processing. 59:161-167
A novel multiple-selected and multiple-valued memory (MSMVM) design using the negative differential resistance (NDR) circuits is demonstrated. The NDR circuits are made of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad0c6d586130239516902c1c702d64c0
https://doi.org/10.1007/s10470-008-9216-3
https://doi.org/10.1007/s10470-008-9216-3