Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Cheon Heo"'
Autor:
Byeongchan So, Kyungbae Lee, Kyungjae Lee, Cheon Heo, Jaedo Pyeon, Kwangse Ko, Jongjin Jang, Okhyun Nam
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:4914-4918
This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd2c8980ab0a62e319c3b034578392e7
https://doi.org/10.1166/jnn.2016.12256
https://doi.org/10.1166/jnn.2016.12256
Publikováno v:
Journal of nanoscience and nanotechnology. 17(1)
We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eac21f5d17bf54f37931123515549b21
https://pubmed.ncbi.nlm.nih.gov/29630184
https://pubmed.ncbi.nlm.nih.gov/29630184
Publikováno v:
Displays. 40:9-16
An increasing number of studies on efficient implementation of vivid and realistic displays are being conducted as liquid crystal displays (LCDs) become widely used in TV applications. For vivid displays, the specifications such as wide color gamut (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::268e0fe21991710b9ec458f26bbd9468
https://doi.org/10.1016/j.displa.2015.05.010
https://doi.org/10.1016/j.displa.2015.05.010
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:8401-8406
In this study, we suggest a polarity-selective in-situ thermal etching and re-growth process for the fabrication of high quality Al terminated AIN epilayers by high temperature metalorganic chemical vapor deposition. Mixed-polar AIN layers grown on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93ad65ecf8ff0d702399cb5757363ab4
https://doi.org/10.1166/jnn.2015.11446
https://doi.org/10.1166/jnn.2015.11446
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:5144-5147
This study investigates the crystallographic polarity transition of AIN layers grown by high temperature metalorganic chemical vapor deposition (HT-MOCVD), with varying trimethylaluminum (TMAI) pre-flow rates. AIN layers grown without TMAI pre-flow h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90ff695438abe30fcc7769be14594bc5
https://doi.org/10.1166/jnn.2015.10368
https://doi.org/10.1166/jnn.2015.10368
Autor:
Byeongchan, So, Kyungbae, Lee, Kyungjae, Lee, Cheon, Heo, Jaedo, Pyeon, Kwangse, Ko, Jongjin, Jang, Okhyun, Nam
Publikováno v:
Journal of nanoscience and nanotechnology. 16(5)
This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::df3e5bb304de643fbb35a28643d0c7ed
https://pubmed.ncbi.nlm.nih.gov/27483845
https://pubmed.ncbi.nlm.nih.gov/27483845
Autor:
Kwangse Ko, Sang-Woo Han, Okhyun Nam, Byeongchan So, Cheon Heo, Kyeongjae Lee, Kyungbae Lee, Taemyung Kwak, Ho-Young Cha
Publikováno v:
Japanese Journal of Applied Physics. 56:015502
The present study investigated the Mg doping effect in the gallium nitride (GaN) buffer layers (BLs) of AlGaN/GaN high-electron-mobility transistor (HEMT) structures grown on semi-insulating 4H-SiC substrates by metal organic chemical vapor depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f995734f8cc5243e4c7200709569d00c
https://doi.org/10.7567/jjap.56.015502
https://doi.org/10.7567/jjap.56.015502
Autor:
Kwangse Ko, Kyeongjae Lee, Byeongchan So, Cheon Heo, Kyungbae Lee, Taemyung Kwak, Sang-Woo Han, Ho-Young Cha, Okhyun Nam
Publikováno v:
Japanese Journal of Applied Physics; Jan2017, Vol. 56 Issue 1, p1-1, 1p