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pro vyhledávání: '"Cheoljun Kim"'
Autor:
Cheoljun Kim, Wanrin Ko
Publikováno v:
Korea Journal of Chinese Linguistics. 97:69-106
Autor:
Min Chul Chun, Min Jin Kim, Bo Soo Kang, Jun Young Lee, Sanghyun Park, Cheoljun Kim, Yongjun Cho, Ji Young Jo
Publikováno v:
Journal of Applied Physics. 129:164101
The discovery of hafnium oxide-based ferroelectrics has resulted in the pursuit of ferroelectric field-effect transistors with higher scalability, lower power consumption, and enhanced switching speed. An in-depth understanding of ferroelectric polar