Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Cheoljoong Park"'
Autor:
Kangwoo Park, Kwanho Kim, Cheoljoong Park, Kayoung Cho, Kun-Ok Ahn, Chankeun Kwon, Jong Woo Kim, Hyun Chul Lee, Hyunseok Song, Heonki Kirr, Sunghwa Ok, Yongsoon Park, Juhyeong Lee, Sooyeol Chai, Hyeonsu Nam, Heejoo Lee, Tae-Sung Jung, Sang Kyu Lee, Jayoon Goo, Hwang Huh, Woopyo Jeong, Kangwook Jo, Geonu Kim, Yujin Yang, Jangwon Park, Chanhui Jeong, Yujong Noh, Hanna Cho, Wanik Cho, Jinhaeng Lee
Publikováno v:
ISSCC
Ever since a 3b/cell (TLC) NAND Flash memory became the mainstream in nonvolatile memory market, a new demand for a 4b/cell (QLC) NAND flash memory has been emerging for low-cost applications. However, QLC has inherently much longer page program time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6a679fe1900f224843b7509806b7dc0
https://doi.org/10.1109/isscc19947.2020.9063117
https://doi.org/10.1109/isscc19947.2020.9063117
